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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Multi-sensor diode for magnetic field and photo detection
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Multi-sensor diode for magnetic field and photo detection

机译：用于磁场和光检测的多传感器二极管

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This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT at forward bias 1 mA and 128 mT at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25°C, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.
机译：这项研究提出了一种可以同时检测一个设备中的磁场和光的多传感器。该结构基于p-n结二极管，这是光检测的基础。这个想法是如何设计磁场的p-n结。双磁二极管结构是一种解决方案。它被设计为适合这些目的。该设备由Sentaurus TCAD专门设计和仿真。它是通过标准CMOS工艺制造的，并测量了磁场和光的响应。它显示了一个很好的设备，可以很好地检测两种类型的能量。在正向偏压为1 mA时，磁响应的相对灵敏度为57 mT，在反向为8 nA时为128 mT。在标准测试条件（25°C，AM 1.5，100 W / m2）下，设备的暗电流为7.34 mA。电流模式器件产生的光电流和阴极电流差是由磁场线性感应的。

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