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首页> 外文会议>IEEE International Conference on Nanotechnology >Thermally induced deformation measurement of through-silicon via (TSV) structures using an atomic force microscope (AFM) moir#x00E9; method
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Thermally induced deformation measurement of through-silicon via (TSV) structures using an atomic force microscope (AFM) moir#x00E9; method

机译：使用原子力显微镜（AFM）Moiré方法热诱导的通过硅通孔（TSV）结构的变形测量

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摘要

3D-IC integration realized by using through-silicon via (TSV) technology is the key trend of electronic device and packaging industry. In this paper, atomic force microscope (AFM) moiré method with pseudo-phase-shifting technique was adapted for the thermally induced deformation measurement of TSV structure to assess its reliability. To enhance the sensitivity of AFM moiré method suitable for sub-micro-scale deformations of TSV structure, the fine pitch and zero thickness grating fabricated by using focused ion beam (FIB) milling was used as the specimen grating. At an elevated temperature, the deformations of TSV structure was measured and analyzed. From the experimental result, global deformations induced by the coefficients of thermal expansion (CTEs) mismatch between the chip and the ceramic substrate were dominant than the local deformations under the elevated temperature.
机译：通过使用通过硅通孔（TSV）技术实现的3D-IC集成是电子设备和包装行业的关键趋势。本文采用伪相移技术的原子力显微镜（AFM）Moiré方法进行了TSV结构的热诱导变形测量，以评估其可靠性。为了增强适用于TSV结构的子微尺度变形的AFMMoiré方法的灵敏度，使用通过使用聚焦离子束（FIB）铣削制造的细间距和零厚度光栅作为样品光栅。在升高的温度下，测量并分析TSV结构的变形。从实验结果，由芯片和陶瓷基板之间的热膨胀系数（CTES）失配诱导的全局变形优于升高温度下的局部变形。

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