Zinc Oxide nanowire transistor nonvolatile memory with a ferroelectric polymer interlayer

机译：氧化锌纳米线晶体管非易失性存储器，具有铁电聚合物中间层

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A ferroelectric polymer memory device based on a top-gated Zinc Oxide (ZnO) nanowire (NW) field-effect transistor (FET) have been fabricated using room temperature process, where the nanowire semiconductor channel was coated with a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The fabricated test device showed excellent properties, with a 5V wide memory window at VG<20V, high On/Off ratio >105 and low gate leakage current <10−12A. Memory effect was verified by the counterclockwise direction of the transfer curve hysteresis of the FET devices, due to the fact that memory window is ascribable to the switchable remnant polarization. This result is an actual demonstration of the memory application which built on nanowire devices.

机译：使用室温工艺制造了一种基于顶栅氧化锌（ZnO）纳米线（NW）场效应晶体管（FET）的铁电聚合物存储器件，其中纳米线半导体通道用聚（偏二氟乙烯 - 三氟乙烯涂覆）[P（VDF-TRFE）]层。制造的测试装置显示出优异的性能，Vg <20V的5V宽内存窗口，高开/关比> 10 5 和低栅极漏电流<10 -12 一种。由于存储器窗口归名可切换残余偏振，因此通过FET器件的传输曲线滞后的逆时针方向验证了记忆效果。该结果是基于纳米线器件上的存储器应用的实际演示。

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《IEEE International Conference on Nanotechnology》|2012年||共4页
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Young Tea Chun; Chu D. P.;
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入库时间 2022-08-20 22:08:44

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1. Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator [J] . Yoon SM, Yang SH, Jung SW, Electrochemical and solid-state letters . 2010,第5期

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2. Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator [J] . Bak Jun Yong, Yoon Sung Min Journal of Vacuum Science & Technology . 2013,第4期

机译：溶液-铟锌-硅-氧化硅有源沟道和有机铁电栅绝缘体组成的混合栅叠层薄膜晶体管的非易失性存储特性
3. Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) [J] . Sung-Min Yoon, Soon-Won Jung, Shin-Hyuk Yang, Organic Electronics . 2010,第11期

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4. Zinc Oxide nanowire transistor nonvolatile memory with a ferroelectric polymer interlayer [C] . Young Tea Chun, Chu, D. P. IEEE International Conference on Nanotechnology;IEEE-NANO . 2012

机译：具有铁电聚合物夹层的氧化锌纳米线晶体管非易失性存储器
5. A lead zirconium titanium oxide-based ferroelectric nonvolatile memory. [D] . Maile, Keith Raymond. 1993

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6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . 2015

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Zinc Oxide nanowire transistor nonvolatile memory with a ferroelectric polymer interlayer

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