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A method for unified treatment of interface conditions suitable for device simulation

机译:一种适用于设备仿真的界面条件的统一处理方法

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A method is presented which allows for a unified treatment of interface conditions covering also both extreme cases, Dirichlet and Neumann boundary conditions. This unified treatment is especially useful if the type of the interface condition depends on the internal state of the device. The method is applied to a heterojunction interface where thermionic field emission and tunneling is assumed.
机译:提出了一种方法,其允许覆盖极端情况,Dirichlet和Neumann边界条件的界面条件的统一处理。如果接口条件的类型取决于设备的内部状态,则该统一处理特别有用。该方法应用于异质结界面,其中假设热离子场发射和隧道。

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