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首页> 外文会议>International Workshop on Active-Matrix Flatpanel Displays and Devices >Post annealing temperature effect on properties of Ga and F codoped ZnO thin films prepared by RF magnetron sputtering
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Post annealing temperature effect on properties of Ga and F codoped ZnO thin films prepared by RF magnetron sputtering

机译：发出退火温度对RF磁控溅射制备的GA和F编码ZnO薄膜性能的影响

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Transparent and conducting gallium (Ga) and fluorine (F) codoped ZnO (GFZO) thin films were deposited on glass substrates by RF magnetron sputtering in CF4/Ar atmosphere with a ZnO:Ga2O3 (3 wt%) target. The influence of post-deposition annealing temperature on the structural, electrical, and optical properties of GFZO thin films was investigated. XRD results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The grain sizes of GFZO films calculated from the full-width at half-maximum of the (002) dif?raction peaks increased from 17.4 to 25.0 nm when the annealing temperature rose from RT to 400 °C. The electrical conductivity and optical transmittance of the GFZO films were also enhanced by 127% and 2.4%, respectively, after a 400 °C-annealing treatment. The lowest resistivity of 3.442×10 Ω-cm, the highest average transmittance of 93.4%, and the highest energy band gap of 3.52 eV were achieved as the sample annealed at 400 °C. The variation of the resistivity after 28 days was within 3% for the 400 °C-annealed sample. The average transmittance in the visible range was over than 91% for all the samples, regardless of annealing temperature. The findings show post-deposition thermal annealing effectively improved the opto-electronic properties of the developed GFZO thin films.
机译：通过RF磁控管溅射在CF4 / AR气氛中沉积透明和导电镓（Ga）和氟（F）编码ZnO（GFZO）薄膜，用ZnO：Ga2O3（3wt ％）靶标沉积在玻璃基板上。研究了沉积后退火温度对GFZO薄膜结构，电和光学性质的影响。 XRD结果表明，所有薄膜都是多晶，具有六边形纯矿石结构，并表现出C轴优选的取向。当退火温度从RT至400℃上升时，从（002）倍数峰的全宽度计算的GFZO膜的晶粒尺寸从（002）倍数的半最大值增加到25.0nm。在400℃的退火处理后，GFZO膜的电导率和光学透射率也分别增强了127±％和2.4±0.4％。最低电阻率为3.442×10Ω-cm，最高的平均透射率为93.4 ％，并且在400℃下退火时，达到了3.52eV的最高能带隙的最高能带隙。对于400°C退火样品，28天后的电阻率的变化在3℃下。无论退火温度如何，所有样品的可见范围中的平均透射率超过91±％。该研究结果显示了沉积后热退火有效改善了开发的GFZO薄膜的光电性质。

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