A two-level prediction model for deep reactive ion etch (DRIE)

机译：深度反应离子蚀刻（Drie）的两级预测模型

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摘要

The authors contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of MEMS devices. Non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and local consumption at the die level. An ion neutral synergism model is constructed from data obtained from several layouts of differing layout pattern densities, and is used to predict wafer level variation with an r.m.s. error below 3%. This model is combined with the die level model, which the authors have reported previously based on T. Hill et al., (2004), on a MEMS layout. The two level model is shown to enable prediction of both within die and wafer scale etch rate variation for arbitrary wafer loadings.

机译：作者有助于捕获MEMS器件的深反应离子蚀刻中的蚀刻不均匀性的定量和系统模型。不均匀性取决于晶片水平的离子和中性物种的不均匀分布，以及模具水平的局部消耗。离子中性协同作用模型由从不同布局图案密度的若干布局获得的数据构成，并且用于预测晶片水平与r.m.s.的变化。误差低于3％。该模型与芯片水平模型相结合，其中作者以前基于T. Hill等人，（2004），在MEMS布局上。示出了两个级模型，以使预测在模具和晶片刻度蚀刻速率变化中的预测是任意晶片装载。

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《IEEE International Conference on Micro Electro Mechanical Systems》|2005年||共5页
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Sun H.; Hill T.; Taylor H.; Schmidt M.; Boning D.;
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中图分类 TP271.4-53;
关键词
sputter etching; micromechanical devices; two level prediction model; deep reactive ion etch; quantitative model; systematic model; MEMS devices; etch nonuniformity; ion neutral synergism model; layout pattern density; wafer level variation; rms error; die level model; etch rate variation; arbitrary wafer loading;

机译：溅射蚀刻;微机械设备;两个水平预测模型;深度反应离子蚀刻;定量模型;系统模型;MEMS器件;蚀刻不均匀;离子中性协同作用;布局图案密度;晶片水平变化;rms误差;蚀刻速率;蚀刻速率变异;任意晶片装载;

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1. A novel deep reactive ion etched (DRIE) glass micro-model for two-phase flow experiments [J] . N. K Karadimitriou, V. Joekar-Niasar, S. M. Hassanizadeh Lab on a chip . 2012,第18期

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2. Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations [J] . Chan-Wook Baik, Seogwoo Hong, Jongseok Kim, Applied Physics Letters . 2012,第7期

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4. A two-level prediction model for deep reactive ion etch (DRIE) [C] . Sun, H., Hill, . 2005

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5. Plasma characterization and correlation with the etch rate and via sidewall angle in a deep reactive ion etch system using Langmuir probe and optical emission spectroscopy. [D] . Koirala, Sudip Prasad. 2010

机译：在使用Langmuir探针和光发射光谱法的深反应离子刻蚀系统中，等离子体表征和刻蚀速率以及通孔侧壁角度相关。
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7. A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE) [O] . Taylor Hayden K., Sun Hongwei, Hill Tyrone F., 2005

机译：深反应离子蚀刻（DRIE）的两级预测模型

A two-level prediction model for deep reactive ion etch (DRIE)

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