Develop Gap-fill Process of Shallow Trench Isolation in 450mm Wafer by Advanced Flowable CVD Technology for Sub-20nm Node

机译：通过高级可流动的CVD技术开发450mm晶圆中浅沟隔离的浅沟隔离过程，用于子20nm节点

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In this study, a novel Flowable CVD process using non-carbon silicon based precursor has been developed for gap filling in 450mm wafer level, sub-20nm STI structure. To achieve 450mm wafer with aspect ratio 5:1 STI structure, guided DSA patterning and a-carbon hard-mask are applied. The various conditions have been screened in deposition, cure and anneal processes in order to result a void free and less Si damage performance. By SEM viewing and FT-IR analysis, the gap-fill profile and mechanism of film conversion are discussed.

机译：在该研究中，已经开发了一种新颖的使用非碳硅基前体的CVD工艺，用于450mm晶片水平，Sub-20nm STI结构中的间隙填充。为了实现具有宽高比5：1的450mm晶圆，施加引导的DSA图案化和碳硬掩模。在沉积，固化和退火过程中筛选了各种条件，以使无效且较少的Si损伤性能。通过SEM观察和FT-IR分析，讨论了GAP填充轮廓和薄膜转换机制。

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《Annual SEMI Advanced Semiconductor Manufacturing Conference》|2016年|474p|共3页
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Min-Hui Chen; Stock Chang;
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中图分类 TN305-53;
关键词
450mm; sub-20nm node; Flowable CVD; STI;

机译：450mm;子20nm节点;可流动的CVD;STI;

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专利

1. Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology [J] . Chan-Yuan Hu, Jone F. Chen, Shih-Chih Chen, Journal of Vacuum Science & Technology . 2010,第2期

机译：65nm以下低功耗互补金属氧化物半导体技术通过优化浅沟槽隔离工艺来改善浅沟槽隔离应力
2. Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology [J] . Hu Chan-Yuan, Chen Jone F., Chen Shih-Chih, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第2期

机译：65nm以下低功耗互补金属氧化物半导体技术通过优化浅沟槽隔离工艺来改善浅沟槽隔离应力
3. Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers [J] . Sarajlic E, de Boer MJ, Jansen HV, Journal of Micromechanics and Microengineering . 2004,第9期

机译：先进的等离子体处理技术与沟槽隔离技术相结合，可在标准硅片中制造高纵横比的MEMS并快速制作原型
4. Develop Gap-fill Process of Shallow Trench Isolation in 450mm Wafer by Advanced Flowable CVD Technology for Sub-20nm Node [C] . Min-Hui Chen, Stock Chang Annual SEMI Advanced Semiconductor Manufacturing Conference . 2016

机译：通过高级可流动的CVD技术开发450mm晶圆中浅沟隔离的浅沟隔离过程，用于子20nm节点
5. Characterization of advanced shallow trench isolation (STI) CMP processes and consumables. [D] . Burkhard, Craig D. 2007

机译：先进的浅沟槽隔离（STI）CMP工艺和消耗品的特性。
6. Thermo-mechanical and Mold Flow Analyses of Die Shift in Wafer Reconstitution Process for Advanced Packaging Technology [O] . Cheng-Ying Yang, Yu-Cheng Liu, Kuo-Shen Chen, 2017

机译：高级包装技术晶圆重构过程中的热机械和模具流程分析
7. Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench211 Isolation Technology [R] . Draper, B. L., Headley, T. J., Hembree, C. E., 1999

机译：0.5微米浅沟槽211隔离技术中产量限制缺陷的识别

Develop Gap-fill Process of Shallow Trench Isolation in 450mm Wafer by Advanced Flowable CVD Technology for Sub-20nm Node

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