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A new methodology for characterizing the progressive BD of HfO{sub}2/SiO{sub}2 metal gate stacks

机译:一种新方法,用于表征HFO {sub} 2 / siO {sub} 2金属栅极堆栈的渐进性BD

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摘要

Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO{sub}2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.
机译:研究了具有锡金属栅极的NFET的介电击穿(BD)和具有1.09nm eot的HFO {sub} 2 /界面层。证明了低电流水平处的渐进BD的发生。报道了一种新的测量方法及其对栅极电压的依赖性。

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