A new methodology for characterizing the progressive BD of HfO_2/SiO_2 metal gate stacks

机译：表征HfO_2 / SiO_2金属栅叠层渐进BD的新方法。

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Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO_2 / interfacial layer with 1.09 run EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported.

机译：研究了具有TiN金属栅极和HfO_2 /界面层且EOT为1.09的nFET的介电击穿（BD）。证明了在低电流水平下进行性BD的发生。报告了一种新的特征生长时间及其对栅极电压的依赖性的测量方法。

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《Microelectronics Technology and Devices-SBMicro 2008》|2008年|303-309|共7页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
R. Pagano; S. Lombardo; F. Palumbo; S. Carloni; P. Kirsch; S.A. Krishnan; C. Young; R. Choi; G. Bersuker; J. H. Stathis;
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作者单位

IMM, CNR, Catania, Italy;

IMM, CNR, Catania, Italy;

CONICET, CNEA, Buenos Aires, Argentina;

IMM, CNR, Catania, Italy;

SEMATECH, Austin, Texas, USA IBM Research, Yorktown Heights, New York, USA;

SEMATECH, Austin, Texas, USA IBM Research, Yorktown Heights, New York, USA;

SEMATECH, Austin, Texas, USA;

SEMATECH, Austin, Texas, USA;

SEMATECH, Austin, Texas, USA;

IBM Research, Yorktown Heights, New York, USA;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. Hot Carrier Effects In N-mosfets With Sio_2/hfo_2/hfsio Gate Stack And Tan Metal Gate [J] . Isodiana Crupi Microelectronic Engineering . 2009,第1期

机译：具有Sio_2 / hfo_2 / hfsio门堆叠和Tan金属门的N-MOSFET的热载流子效应
2. On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO_2/SiO_2 gate stack [J] . Debabrata Maji, Felice Crupi, Gino Giusi, Applied Physicsletters . 2008,第16期

机译：具有TiN / TaN / HfO_2 / SiO_2栅堆叠的外延Ge p沟道金属氧化物半导体场效应晶体管中栅极电流的直流和噪声特性
3. Pre- and post-BD electrical conduction of stressed HfO_2/SiO_2 MOS gate stacks observed at the nanoscale [J] . L. Aguilera, M. Porti, M. Nafria, Microelectronics & Reliability . 2005,第9a11期

机译：在纳米级观察到的应力HfO_2 / SiO_2 MOS栅叠层的BD前后导电
4. A new methodology for characterizing the progressive BD of HfO{sub}2/SiO{sub}2 metal gate stacks [C] . R. Pagano, S. Lombardo, F. Palumbo, Symposium on Microelectronics Technology and Devices . 2008

机译：一种新方法，用于表征HFO {sub} 2 / siO {sub} 2金属栅极堆栈的渐进性BD
5. Gate stack and channel engineering: Study of metal gates and germanium channel devices. [D] . Todi, Ravi M. 2007

机译：栅极堆叠和通道工程：金属栅极和锗通道器件的研究。
6. Donor–acceptor stacking arrangements in bulk and thin-film high-mobility conjugated polymers characterized using molecular modelling and MAS and surface-enhanced solid-state NMR spectroscopy [O] . Sachin R. Chaudhari, John M. Griffin, Katharina Broch, 2017

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7. Efficient broadband highly dispersive HfO_2/SiO_2 multilayer mirror for pulse compression in near ultraviolet [O] . Razskazovskaya O., Hassan M. Th., Luu T. T., 2016

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8. Multiple Metals Stack Emission Measurement Methodology for Stationary Sources,Current Status [R] . Ward, T. E. 1993

机译：固定源，当前状态的多金属堆排放测量方法

A new methodology for characterizing the progressive BD of HfO_2/SiO_2 metal gate stacks

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