• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Microelectronics Technology and Devices >Boosting I_(ON)/I_(OFF) Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs
【24h】

Boosting I_(ON)/I_(OFF) Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs

机译：升高I_（开启）/ I_（OFF）比率在极限子横向仪晶体管中：FDSOI多栅极MOSFET和多屏障增强栅极调制谐振隧道FET的情况

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Using efficient NEGF methods, we explore and optimize here I_(ON)/I_(OFF) ratios and slope characteristics of ultra scaled nano-transistors. Those depend on the gate-to-channel coupling and carrier statistics that dictate the way carriers are made available to drive a current when increasing V_G. We first investigate the gate-to-channel coupling. Quantum effects and their impact on ultra-scaled nanowires are enlightened when optimizing I_(ON)/I_(OFF) ratios vs. the cross-section size in a 10nm nanowire. It is shown that an optimum cross-section of about 3×3 nm~2 exist due to a trade-off between electrostatic and confinement. Also the fundamental limit of improving gate control by thinning gate oxide is shown and leads us to switch from EOT to the CET concept. As the density of state is about constant with V_G in a standard transistor, when varying the gate voltage the current varies at a rate dictated by Fermi-Dirac statistics only. In order to further increase I_(ON)/I_(OFF) ratios, we propose a new device concept, the gate-modulated resonant tunneling FET (RT-FET), that uses a multi-barrier gate controlled architecture to render this DoS non-constant with V_G.
机译：使用高效的Negf方法，我们探索并优化Ultra缩放纳米晶体管的I_（ON）/ I_（OFF）比率和斜率特性。那些依赖于栅极到信道耦合和载波统计，所述载波统计在增加载波时可以在增加V_G时驱动载波。我们首先研究栅极到通道耦合。当优化I_（ON）/ I_（OFF）比率与10nm纳米线中的横截面尺寸时，在超缩放纳米线对超缩放纳米线的量子效应及其影响。结果表明，由于静电和限制之间的折衷，存在约3×3nm〜2的最佳横截面。此外，还示出了通过薄栅极改善栅极控制的基本限制，并导致我们从EOT切换到CET概念。由于状态的密度大致在标准晶体管中与V_G恒定，当改变栅极电压时，电流仅以FERMI-DIRAC统计数据决定的速率变化。为了进一步提高I_（ON）/ I_（OFF）比率，我们提出了一种新的设备概念，使用多屏障栅极控制架构的栅极调制谐振隧道FET（RT-FET）来呈现该DOS非 - 与V_G合作。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号