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首页> 外文会议>Microelectronics technology and devices - SBMicro 2011 >Boosting I_(ON)/I_(OFF) Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs
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Boosting I_(ON)/I_(OFF) Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs

机译：提高最终亚癸级晶体管的I_（ON）/ I_（OFF）比率：以FDSOI多栅极MOSFET和多势垒增强型栅极调制谐振隧道FET为例

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Using efficient NEGF methods, we explore and optimize here I_(ON)/I_(OFF) ratios and slope characteristics of ultra scaled nano-transistors. Those depend on the gate-to-channel coupling and carrier statistics that dictate the way carriers are made available to drive a current when increasing V_G. We first investigate the gate-to-channel coupling. Quantum effects and their impact on ultra-scaled nanowires are enlightened when optimizing I_(ON)/I_(OFF) ratios vs. the cross-section size in a 10nm nanowire. It is shown that an optimum cross-section of about 3×3 nm~2 exist due to a trade-off between electrostatic and confinement. Also the fundamental limit of improving gate control by thinning gate oxide is shown and leads us to switch from EOT to the CET concept. As the density of state is about constant with V_G in a standard transistor, when varying the gate voltage the current varies at a rate dictated by Fermi-Dirac statistics only. In order to further increase I_(ON)/I_(OFF) ratios, we propose a new device concept, the gate-modulated resonant tunneling FET (RT-FET), that uses a multi-barrier gate controlled architecture to render this DoS non-constant with V_G.
机译：使用有效的NEGF方法，我们在这里探索和优化超大规模纳米晶体管的I_（ON）/ I_（OFF）比率和斜率特性。这些取决于门-通道耦合和载波统计，后者决定了在增加V_G时使载波可用于驱动电流的方式。我们首先研究门-通道耦合。当优化10nm纳米线的I_（ON）/ I_（OFF）比与横截面尺寸时，量子效应及其对超尺度纳米线的影响得到了启发。结果表明，由于静电与约束之间的折衷，存在最佳的横截面约为3×3 nm〜2。还显示了通过减薄栅极氧化物来改善栅极控制的基本限制，这使我们从EOT转换为CET概念。由于标准晶体管中的状态密度随V_G大约恒定，因此当改变栅极电压时，电流仅以费米-狄拉克（Fermi-Dirac）统计所决定的速率变化。为了进一步提高I_（ON）/ I_（OFF）比率，我们提出了一种新的器件概念，即栅极调制谐振隧穿FET（RT-FET），它使用多势垒栅极控制架构使该DoS不再-与V_G恒定。

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