Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs

机译：应变有效性依赖于翅片尺寸和形状的N型三栅架

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We analyze in this work, for the first time, the effectiveness and the dependence of the induced uniaxial stress on process variables, using the CESL technique on n-type MuGFETs thought 3D simulations. The fin cross-section shape variation is also included with a complete study on the stress distribution and the electric characterization of the device to measure the impact on its performance. The stress distribution and the device performance exhibited dependence with the shape and fin dimensions, with longer and taller inverse trapezium fin possessing better stress and DC characteristics, and better AC performance on the regular trapezium.

机译：我们在这项工作中分析了诱导的单轴应力对过程变量的有效性和依赖性，使用了N型Mugfet的CESL技术思想3D模拟。翅片横截面形状变化也包括在对压力分布和装置的电力表征的完整研究中，以测量对其性能的影响。应力分布和器件性能表现出与形状和翅片尺寸的依赖性，具有更长的逆梯形翅片，具有更好的应力和直流特性，以及常规梯形上的更好的交流性能。

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《Symposium on Microelectronics Technology and Devices》|2011年||共8页
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R. T. Buhler; R. Giacomini; P. G. D. Agopian; J. A. Martino;
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4. Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs [C] . R. T. Buehler, R.Giacomini, P.G.D. Agopian, Microelectronics technology and devices - SBMicro 2011 . 2011

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Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs

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