Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs

机译：n型三栅极MuGFET的鳍尺寸和形状对应变效率的影响

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We analyze in this work, for the first time, the effectiveness and the dependence of the induced uniaxial stress on process variables, using the CESL technique on n-type MuGFETs thought 3D simulations. The fin cross-section shape variation is also included with a complete study on the stress distribution and the electric characterization of the device to measure the impact on its performance. The stress distribution and the device performance exhibited dependence with the shape and fin dimensions, with longer and taller inverse trapezium fin possessing better stress and DC characteristics, and better AC performance on the regular trapezium.

机译：在这项工作中，我们首次使用CESL技术对n型MuGFET进行3D模拟，分析了感应单轴应力对工艺变量的有效性和依赖性。鳍的横截面形状变化也包括在应力分布和器件的电学特性的完整研究中，以测量对其性能的影响。应力分布和器件性能表现出与形状和鳍片尺寸的关系，更长和更高的反梯形鳍片具有更好的应力和直流特性，而常规梯形片具有更好的交流性能。

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来源
《Microelectronics technology and devices - SBMicro 2011》|2011年|p.207-214|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
R. T. Buehler; R.Giacomini; P.G.D. Agopian; J.A. Martino;
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作者单位

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, SP, Brazil;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, SP, Brazil,Department of Electrical Engineering, FEI, Sao Bernardo do Campo, SP, Brazil;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, SP, Brazil,Department of Electrical Engineering, FEI, Sao Bernardo do Campo, SP, Brazil;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, SP, Brazil;

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Strain Effectiveness Dependence on Fin Dimensions and Shape for n-type Triple-Gate MuGFETs

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