An Ultra Low Voltage Ultra High Gain CMOS LNA Using Forward Body Biasing Technique

机译：超低电压超高增益CMOS LNA使用前体偏置技术

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A fully integrated 1.5 GHz low noise amplifier suitable for ultra-low voltage applications is designed and simulated in a standard 0.18μm CMOS technology. Using the folded cascode topology and forward body biasing technique, the proposed LNA works at a very low supply voltage and low power consumption. The proposed LNA has a power gain (S_(21)) of 22 dB with a noise figure of 1.9 dB, while consuming 2.5mW dc power with an ultra low supply voltage of 0.5 V.

机译：完全集成的1.5 GHz低噪声放大器，适用于超低电压应用，设计和模拟标准的0.18μmCMOS技术。使用折叠的CASCODE拓扑和前体偏置技术，所提出的LNA在极低的电源电压和低功耗下工作。所提出的LNA具有22 dB的功率增益（S_（21）），噪声系数为1.9 dB，同时消耗2.5MW的直流电源，具有0.5V的超低电源电压。

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《IEEE International Midwest Symposium on Circuits and Systems》|2011年||共4页
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Ehsan Kargaran; Ghazal Nabovati; Mohammad Reza Baghbanmanesh; Khalil Mafinezhad; Hooman Nabovati;
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中图分类 TN7-53;
关键词
Forward body biasing; Low noise amplifier (LNA); Folded cascade; Ultra high gain; Low power; Ultra low voltage;

机译：前体偏置;低噪音放大器（LNA）;折叠级联;超高收益;低功率;超低电压;

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专利

1. A 0.6 V, low-power and high-gain ultra-wideband low-noise amplifier with forward-body-bias technique for low-voltage operations [J] . Pandey Sunil, Singh Jawar Microwaves, Antennas & Propagation, IET . 2015,第8期

机译：具有前向体偏置技术的0.6 V，低功耗，高增益超宽带低噪声放大器，用于低压运行
2. A 3.1-10.6-GHz CURRENT-REUSED CMOS ULTRA-WIDEBAND LOW-NOISE AMPLIFIER USING SELF-FORWARD BODY BIAS AND FORWARD COMBINING TECHNIQUES [J] . Chia-Hsing Wu, Yo-Sheng Lin, Chien-Chin Wang Microwave and optical technology letters . 2013,第10期

机译：采用前向偏置和前向组合技术的3.1-10.6-GHz电流重用CMOS超宽带低噪声放大器
3. Gain-Enhancement Techniques for CMOS Folded Cascode LNAs at Low-Voltage Operations [J] . Hsieh H.-H., Wang J.-H., Lu L.-H. IEEE Transactions on Microwave Theory and Techniques . 2008,第8期

机译：低压工作状态下CMOS折叠级联LNA的增益增强技术
4. An ultra low voltage ultra high gain CMOS LNA using forward body biasing technique [C] . Kargaran Ehsan, Nabovati Ghazal, Baghbanmanesh Mohammad Reza, The 54th IEEE International Midwest Symposium on Circuits and Systems . 2011

机译：采用正向主体偏置技术的超低压超高增益CMOS LNA
5. Architectures and circuit design techniques for ultra low voltage CMOS receivers. [D] . Balankutty, Ajay. 2010

机译：超低压CMOS接收器的架构和电路设计技术。
6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
7. Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications [O] . N. F. A. B. Halim, S. A. Z. Murad, A. Harun, 2020

机译：设计3.1-6.0 GHz CMOS超宽带低噪声放大器，用于无线应用前体偏置技术

An Ultra Low Voltage Ultra High Gain CMOS LNA Using Forward Body Biasing Technique

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