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首页> 外文期刊>Microwaves, Antennas & Propagation, IET >A 0.6 V, low-power and high-gain ultra-wideband low-noise amplifier with forward-body-bias technique for low-voltage operations
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A 0.6 V, low-power and high-gain ultra-wideband low-noise amplifier with forward-body-bias technique for low-voltage operations

机译：具有前向体偏置技术的0.6 V，低功耗，高增益超宽带低噪声放大器，用于低压运行

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摘要

A two-stage common-source (CS) low-noise amplifier (LNA) that uses a forward-body-bias technique in N-type metal-oxide semiconductor devices and intended to achieve a high gain and low power consumption is proposed in this study for ultra-wideband (UWB) applications. Its first stage yields an exceptionally high gain because of high transconductance ( = 16 mS) of the input device. It also shows simultaneous wideband input matching and low-noise figure (NF) characteristics with the aid of source degenerated inductors. A simple source degenerated CS topology with the shunt-peaking inductor is designed as the second stage to enhance the gain response at high frequencies. Using a standard 90 nm complementary metal-oxide semiconductor process, the proposed UWB LNA achieves a gain ≥ 20 dB in the frequency range of 3.1-10.6 GHz, while consuming only 12.6 mW power from a 0.6 V supply voltage. The simulation results show a minimum NF (NF) below 1.7 dB in the frequency range of 3.1-10.6 GHz and input return loss <; -10 dB in the frequency range of 3.5-10 GHz. When a two tone test is performed with a frequency spacing of 2 MHz, a high value of third-order input intercept point of -8 dBm is also achieved.
机译：提出了一种在N型金属氧化物半导体器件中使用前向体偏置技术的两级共源（CS）低噪声放大器（LNA），旨在实现高增益和低功耗研究超宽带（UWB）应用。由于输入设备的高跨导（= 16 mS），其第一级产生了异常高的增益。它还借助源极退化电感器显示了同步的宽带输入匹配和低噪声系数（NF）特性。具有并联峰值电感器的简单源极退化CS拓扑被设计为第二阶段，以增强高频下的增益响应。提议的UWB LNA使用标准的90 nm互补金属氧化物半导体工艺，在3.1-10.6 GHz的频率范围内实现了≥20 dB的增益，而从0.6 V的电源电压仅消耗了12.6 mW的功率。仿真结果表明，在3.1-10.6 GHz的频率范围内，最小NF（NF）低于1.7 dB，输入回波损耗<;在3.5-10 GHz的频率范围内为-10 dB。当以2 MHz的频率间隔执行两次音调测试时，也可以达到-8 dBm的高阶三阶输入截取点。

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