Synthesis, characterization and engineering of two-dimensional transition metal dichalcogenides

机译：二维过渡金属二卤化物的合成，表征与工程

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In this talk, we first report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. We next demonstrate how self-assembled monolayers with a variety of end termination chemistries can be utilized to tailor the physical properties of single-crystalline MoS2 atomic-layers. Our data suggests that combined interface-related effects of charge transfer, built-in molecular polarities, varied densities of defects, and remote interfacial phonons strongly modify the electrical properties of MoS2, illustrating an engineering approach for local and universal property modulations in two-dimensional atomic-layers.

机译：在本次演讲中，我们首先报告了二硫化钼原子层的受控气相合成，并阐明了其结晶单层中成核，生长和晶界形成的基本机理。研究了多晶二硫化钼原子层中晶粒的原子结构和形态及其边界。检查原子层的电特性并评估晶界的作用。接下来，我们演示如何利用具有各种末端终止化学性质的自组装单分子层来定制单晶MoS2原子层的物理性质。我们的数据表明，电荷转移，内置分子极性，各种缺陷密度和远程界面声子的与界面相关的综合影响强烈地改变了MoS2的电性能，说明了二维局部和通用属性调制的工程方法原子层。

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《IEEE International Conference on Nanotechnology》|2014年|616-619|共4页
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Najmaei S.; Jun Lou;
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carrier mobility; charge exchange; crystal morphology; grain boundaries; interface phonons; molybdenum compounds; monolayers; nucleation; self-assembly; vacuum deposition; MoSsub2/sub; atomic structure; built-in molecular polarities; carrier mobility; charge transfer; controlled vapor phase synthesis; crystalline monolayers; defect densities; electrical properties; end termination chemistries; grain boundary formation; grain morphology; interface-related effects; local property modulations; molybdenum disulfide atomic layers; nucleation; physical properties; polycrystalline molybdenum disulfide atomic layers; remote interfacial phonons; self-assembled monolayers; single-crystalline MoSsub2/sub atomic-layers; two-dimensional atomic-layers; two-dimensional transition metal dichalcogenides; universal property modulations; Conferences; Nanotechnology;

机译：载流子迁移率;电荷交换;晶体形态;晶界;界面声子;钼化合物;单层;成核;自组装;真空沉积; MoS _{2 ;原子结构;内在分子极性;载流子迁移率电荷转移受控气相合成晶体单层缺陷密度电性质端接化学晶界形成晶粒形态界面相关效应局部性质调制二硫化钼原子层成核物理性质多晶钼二硫化物原子层;远程界面声子;自组装单分子层;单晶MoS _{2 原子层;二维原子层;二维过渡金属二卤化物;通用性能调制;会议;纳米技术;}}

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机译：二维过渡金属二硫化物磁性mos2 @ Fe3O4纳米粒子的合成与表征，用于吸附Cr（VI）/ Cr（III）

Synthesis, characterization and engineering of two-dimensional transition metal dichalcogenides

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