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Wirebond enhancement on copper palladium bonding in a Over Pad Metalization

机译：焊盘金属化中铜钯键合的键合增强

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This paper presents the wire bonding enhancement for copper palladium (CuPd) wires on Nickel Palladium (NiPd) Over Pad Metallization (OPM) on bond pads of Power Management Device. The enhancement was done to minimize Non-Stick on Pad (NSOP) and further improvement on ball bond adhesion using 33um CuPd Wire. A Design of Experiment (DOE) was conducted for the Wire bond process Improvement to reduced NSOP occurrence. The DOE showed strong dependence on the Forming Gas Flow in the Chamber, E-torch and 3 Nozzle to improved ball bond adhesion. The ball bond adhesion was measured through ball shear test (BST). The Forming Gas Flow optimization indicated the need to reduce chamber and E-torch flow by about 30% form current value used for Bare Copper wire. However the 3 nozzle should be increased about 33%. This resulted to higher BST readings by 40% from the original readings. NSOP occurrence was still observed despite the wire bond process improvement. Process mapping was performed with the aid of an ISHIKAWA Diagram. The analysis indicated that poor bond pad property was the major contributor of NSOP. A detailed physical analysis of the bond pad showed thin Pd plating. The Pd thickness was verified through cross sectioning of the pads. The thickness was correlated and confirmed by manual cross sectioning, Focus Ion Beam (FIB) and depth profiling using Top of Flight Secondary Ion Mass Spectroscopy (TOFSIMS). NSOP occurrence was observed for Pd thickness of 200nm and below. Good bondability was obtained with Pd thickness above 300nm. Other bond pad manifestation was noted such as discoloration and rough/granulated bond pad surface. The discoloration and rough surface was due to the pronounced nickel structure underneath the thin Pd plating. Forming Gas Flow shows significant effect on ball bond adhesion but does not completely eliminate the NSOP occurrence. The bond pad morphology plays strong correlation on the NSOP occurrence.
机译：本文介绍了电源管理设备焊盘上焊盘金属化（OPM）上镍钯（NiPd）上的铜钯（CuPd）导线的引线键合增强。使用33um CuPd焊丝进行了增强，以最大程度地减少不粘焊盘（NSOP）并进一步改善球焊粘合力。为改进引线键合工艺进行了实验设计（DOE），以减少NSOP的发生。 DOE强烈依赖腔室，E型割炬和3个喷嘴中的成型气流，以改善球键的附着力。通过球剪切试验（BST）测量球粘合力。成型气流优化表明需要将腔室和电子割炬流量减少裸铜线使用电流值的30％左右。但是第3个喷嘴应增加约33％。这导致BST读数比原始读数高40％。尽管引线键合工艺有所改进，但仍观察到NSOP的发生。借助ISHIKAWA图执行过程映射。分析表明，不良的焊盘性能是造成NSOP的主要原因。对焊盘的详细物理分析表明，Pd镀层薄。通过焊盘的横截面验证了钯的厚度。通过手动横截面，聚焦离子束（FIB）和使用飞行二级离子质谱（TOFSIMS）进行深度剖析来关联和确认厚度。对于200nm及以下的Pd厚度观察到了NSOP的发生。当钯厚度大于300nm时，可获得良好的粘结性。注意到其他接合垫表现，例如变色和粗糙/颗粒状的接合垫表面。变色和粗糙的表面是由于薄Pd镀层下方明显的镍结构所致。形成气流显示出对球键粘合的显着影响，但并未完全消除NSOP的发生。焊盘形态与NSOP的发生密切相关。

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