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首页> 外文会议>IEEE Electronics Packaging Technology Conference >The IMC formation and progress in the copper pillar Cu/Sn1.8Ag /OSP-Cu microbump structure upon current stressing
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The IMC formation and progress in the copper pillar Cu/Sn1.8Ag /OSP-Cu microbump structure upon current stressing

机译：电流应力作用下铜柱Cu / Sn1.8Ag / OSP-Cu微凸块结构的IMC形成及进展

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The present study investigated the evolution of intermetallic compounds on a microbump structure upon electric current stressing. The incorporation of Cu pillar gives rise to the microbump structure of TiCuCu/Sn1.8Ag/OSP (organic solderability preservative)-Cu. The current stressing was conducted at a current density of 1.0 × 10 A/cm under 125°C for various durations of 24hr, 100hr, 200hr, 300hr, and tested to fail(566hr). In order to have a good understanding to the progress and mechanism of IMCs growth, the bumps were examined in perpendicular directions. The growth of intermetallic compounds within the microbump was found to segregate on certain corner in the beginning of current stressing. The intermetallic compounds grew from the segregated area as induced by electric current flow. The intermetallic compounds grew to almost completely occupy the entire solder bump in most of the joints investigated. CuSn grew to occupy most of the solder volume of the microbump joint in the failed specimen, while the CuSn and AgSn IMCs gathered at the center of solder joint. Cracks penetrated through the central region of the joint between the upper and lower CuSn IMC. The cross-section inspection revealed that the microbump structure failed through the voids and crack formation along the central region of the joints. The findings indicate the marvelous difference in intermetallic compounds formation behavior between flip solder bump and microbump as a result of the differences in current density and solder/UBM structure.
机译：本研究研究了电流应力作用下微凸块结构上金属间化合物的演化。铜柱的引入产生了TiCuCu / Sn1.8Ag / OSP（有机可焊性防腐剂）-Cu的微凸点结构。在125℃下以1.0×10 A / cm 2的电流密度进行电流应力24小时，100小时，200小时，300小时的各种持续时间，并测试失败（566小时）。为了更好地了解IMCs的生长过程和机理，在垂直方向上检查了凸点。发现微凸块内金属间化合物的生长在电流应力开始时隔离在某些角上。金属间化合物由于电流的感应而从偏析区域生长。在大多数研究的接头中，金属间化合物几乎完全占据了整个焊料凸点。在失效样品中，CuSn逐渐占据了微型凸点接头的大部分焊料体积，而CuSn和AgSn IMC聚集在焊料接头的中心。裂纹穿透上下CuSn IMC之间的接头中心区域。横截面检查显示，微凸点结构通过沿接缝中心区域的空隙和裂纹形成而失效。这些发现表明，由于电流密度和焊料/ UBM结构的差异，在倒装焊料凸块和微型凸块之间的金属间化合物形成行为存在巨大差异。

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