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Reticle defect sizing of optical proximity correction defects using SeM imaging and image analysis techniques

机译:使用SEM成像和图像分析技术光阑近距离校正缺陷的掩模版缺陷尺寸

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Sizing of programmed defects on optical proximity correctioon (OPC) features is addressed usin ghigh resolution scanning electron microscope (SEM) images and image analysis techniques. A comparison and analysis of different sizing methods is made. This paper addresses the issues of OPC defect definition and discusses the experimental measurement results obtained by SEM in combination with image analysis techniques.
机译:在光学接近校正器(OPC)特征上的编程缺陷的尺寸是解决了USIN GHIGH分辨率扫描电子显微镜(SEM)图像和图像分析技术。不同施胶方法的比较与分析。本文解决了OPC缺陷定义的问题,并讨论了SEM与图像分析技术相结合获得的实验测量结果。

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