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首页> 外文会议>Conference on photomask and next-generation lithography mask technology >Mask Roadmap, Mask Technology Trend, Critical Issues, and Activities of International SEMATECH
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Mask Roadmap, Mask Technology Trend, Critical Issues, and Activities of International SEMATECH

机译：面具路线图，面具技术趋势，国际SEMATECH的关键问题和活动

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It is well known that the semiconductor industry continues to drive performance improvements through lithography resolution development. Further the International Technology Roadmap for Semiconductors (ITRS) timing continues to be driven aggressively resulting in less inherent lithography resolution advantage against the desired linewidth. The effect has been to require significantly tightened photomask specifications with aggressive timing constraints. Mask Error Enhancement Factors and wavelength choices are driving a need for multiple options for the photomask end user, which include Attenuated and Alternating Phase Shifting Masks. The compounded effect of the roadmap move-in results in extreme measures being needed to ensure the photomask infrastructure will be ready for these demands.
机译：众所周知，半导体行业通过光刻分辨率的开发继续推动性能改进。此外，用于半导体（ITRS）时序的国际技术路线图继续激进导致较低的固有的光刻分辨率优势，而是针对所需的线宽。该效果是需要显着紧张的光掩模规范，具有侵略性的时序约束。掩模误差增强因子和波长选择是为光掩模最终用户的多个选项驱动，其包括减毒和交替的相移掩模。路线图的复合效果在需要极限措施中，以确保光掩模基础设施将为这些需求做好准备。

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