Proximity Effect Correction For Reticle Fabrication

机译：掩盖制造的邻近效应校正

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As the LSI pattern density increases, the minimum feautre size on reticle decreases and the required dimensional accuracy becomes more severe. To write patterns for 130nm-node device, the proximity effect correction (PEC) is essential for electron beam mask writing system (EB mask writer) to obtain enough CD accuracy. We optimized the proximity effect correction parameters in EB mask writer (EBM-210VS); and the evaluated results are presented.

机译：随着LSI图案密度的增加，掩模版的最小FeAutre大小降低，所需的尺寸精度变得更加严重。为了为130nm节点设备写入图案，接近效果校正（PEC）对于电子束掩模写入系统（EB掩模编写器）是必不可少的，以获得足够的CD精度。我们优化了EB面具编写器（EBM-210Vs）中的接近效果校正参数;并提出了评估的结果。

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《Conference on photomask and next-generation lithography mask technology》|2000年||共8页
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Masao Sugiyama; Shiji Kubo; Kouji Hiruta; Takayuki Iwamatsu; Tatsuya Fujiawa; Hiroaki Morimoto; SPIE-The International Society for Optical Engineering;
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中图分类摄影机具与设备;
关键词
Electron beam; Mask writer; Chemically amplified resist; 50kV; Proximity effect correction;

机译：电子束;掩模作家;化学放大抗蚀剂;50kV;邻近效果校正;

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2. High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment [J] . Rosamond Mark C., Batley Joseph T., Burnell Gavin, Microelectronic Engineering . 2015,第auga1期

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3. Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction [J] . Katsuhiko Harazaki, Tasuku Yoshioka, Kiyoshige Ohmori, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第9BPt1期

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4. Proximity Effect Correction For Reticle Fabrication [C] . Masao Sugiyama, Shiji Kubo, Kouji Hiruta, Conference on photomask and next-generation lithography mask technology . 2000

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5. Implementation of e-beam proximity effect correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas . [D] . Yesilkoy, Filiz. 2010

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7. Effect of Reticle CD Uniformity on Wafer CD Uniformity in the Presence of Scattering Bar Optical Proximity Correction [O] . Konstantinos Adam Robert, Robert Socha, Mircea Dusa, 1998

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8. Design and Fabrication of Binary-Valued Alignment Reticle Patterns [R] . 1987

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Proximity Effect Correction For Reticle Fabrication

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