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首页> 外文会议>Conference on photomask and next-generation lithography mask technology >A CA Resist with High Sensitivity and Sub 100nm Resolution for Advanced Mask Making
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A CA Resist with High Sensitivity and Sub 100nm Resolution for Advanced Mask Making

机译：具有高灵敏度和亚100nm分辨率的CA抗蚀剂，用于高级掩模制作

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Recently, there is significant interest in using CA resists for electron beam (E-Beam) applications including mask making, direct write, and projection pr8inting. CA resists provide superior lithographic performnace in comparison to traditional non-CA E-beam resists in particulr high contrast, resolution, and sensitivity. However, most of the commercially available CA resists have the concern of airborne base contaminants and sensitivity of PAB and/or PEB temperatures. In this presentation, we will discuss a new improved ketal resist system referred to as KRS-XE which exhibits excellent lithography, is robust toward airborne base, compatible with 0.263N TMAH aqueous developer and exhibits a large PAB/PEB latitude. With the combination of a high performance mask making E-beam exposure tool, high kV (75kV) shaped beam system EL4+ and the KRS-XE resist, we have printed 75nm lines/space features with excellent profile control at a dose of 13 mu C/cm~2 at 75kV. The shaped beam vector scan system used here provides an unique property in resolving small feautres in lithography and throughput. Overhead in EL4+ limits the systems ability to fully exploit the sensitivity of the new resist for throughput. The EL5 system has sufficiently low overhead that it is projected to print a 4X, 16G DRAM mask with OPC in under 3 hours with the CA resist. We will discuss the throughput advantages of the next generation EL5 system over the existing EL4+.
机译：最近，使用包括掩模制作，直接写入和投影PR8INT的电子束（电子束）应用的CA抗蚀剂存在显着兴趣。与传统的非Ca E-梁相比，CA抗蚀剂提供优异的光刻性能，与传统的非CA E-梁抗抗衡对比度，分辨率和灵敏度相比。然而，大多数市售的CA抗蚀剂具有空气源性基础污染物和PAB和/或PEB温度的敏感性的关注。在本文中，我们将讨论新的改进改进的缩酮抗蚀剂系统，称为KRS-XE，其具有优异的光刻，对于空气传播，与0.263N的TMAH含水显影剂相容，并且具有大的PAB / PEB纬度。通过高性能掩模制作电子束曝光工具的组合，高kV（75kV）形梁系统EL4 +和KRS-XE抗蚀剂，我们已经打印了75nm的线/空间特征，具有优异的型材控制，剂量为13μc / cm〜2 75kV。这里使用的形状的梁矢量扫描系统在解析光刻和吞吐量中的小型Feautres方面提供了独特的财产。 EL4 +的开销限制了系统能够充分利用新抗蚀剂的吞吐量的灵敏度。 EL5系统的开销具有足够低的开销，以便在3小时内打印4倍，16G DRAM掩模在3小时内与CA抗蚀剂一起打印OPC。我们将讨论在现有EL4 +上的下一代EL5系统的吞吐量优势。

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