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Phase Defects on DUV Alternating PSMs

机译:DuV交替PSM上的相位缺陷

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摘要

To extend the life of photo lithography, it has been proceeded the development of the strong PSMs which has no printing "phase shifter" defects. At PMJ'98, a defect inspection algorithm for phase shifter defects of 60 degrees on i-line multi-phase alternating PSMs was discussed. At BACUS'99, a defect printability and inspection sensitivity of multi-phase shifter defect for KrF exposure had laso discussed. It was reported that the inspection tool combining 9MD84SR(i) and STARlight had enough sensitivity for quartz bump defect that caused +/- 10percent CD-error on 150nm L&S pattern. But, the delay of ArF exposure tool and process requires DUV low-k_2-lithography for next generation devices. And then, we tried to evaluate defects printability and inspection sensitivity for Logic-Gate pattern mask, that line width is narrower than the line width evaluated by precede researchers.
机译:为了延长照片光刻的寿命,已经开始开发了没有印刷“移相器”缺陷的强PSM的开发。在PMJ'98,讨论了I-LINE多相交替PSM上的60度的移相器缺陷的缺陷检查算法。在Bacus'99,对KRF曝光的多相移位缺陷的缺陷可印刷性和检查敏感性具有Laso讨论。据报道,检查工具组合9MD84SR(I)和星光对于在150nm L&S图案上导致+/-10percent CD误差的石英凸块缺陷具有足够的灵敏度。但是,ARF曝光工具和过程的延迟需要下一代设备的Duv Low-K_2光刻。然后,我们试图评估逻辑门模式掩模的缺陷可打印性和检查敏感性,该线宽窄于先前研究人员评估的线宽。

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