Effective OPC Pattern Generation using Chemically Amplified Resist for 0.13 mu m Design Rule Masks

机译：使用化学放大抗蚀剂的有效OPC模式生成为0.13亩M MS设计规则面具

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigated the printability of various OPC patterns with different sizes and densities for mask technology below 0.13 mu m design rule using Chemically Amplified Resist (CAR) and 50kV e-beam system. Because of high resolution characteristics of CAR process with high acceleration voltage system, we obtained OPC printability of 0.12 mu m even in scattering bar type and excellent pattern fidelity. How to design to get required OPC pattern, design guide was considered in this work and discussed the applicability of CAR process to practical manufacturing of OPC masks of 0.13 mu m design rule or less.

机译：我们研究了各种OPC图案的可印刷性，使用化学放大抗蚀剂（汽车）和50kV电子束系统，在0.13μm的设计规则低于0.13μm的掩模技术的不同尺寸和密度。由于具有高加速电压系统的汽车工艺的高分辨率特性，即使在散射条类型和优异的模式保真度下，我们也能获得0.12亩的OPC可印刷性。如何设计以获得所需的OPC模式，在这项工作中考虑了设计指南，并讨论了汽车过程对OPC面具的实际制造的适用性0.13 mu m设计规则或更少。

著录项

来源
《Conference on photomask and next-generation lithography mask technology》|2000年||共11页
会议地点
作者
Il-Ho Lee; Kyung-Han Nam; Hong-Suk Kim; SPIE-The International Society for Optical Engineering;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类摄影机具与设备;
关键词
Optical Proximity Correction (OPC); 0.13 mu m design rule; Chemically Amplified Resist (CAR); High Acceleration Voltage System; Resolution;

机译：光学邻近校正（OPC）;0.13 mu m设计规则;化学放大抗蚀剂（汽车）;高加速度电压系统;分辨率;

相似文献

外文文献
中文文献
专利

1. Dependence of stochastic defect generation on quantum efficiency of acid generation and effective reaction radius for deprotection in chemically amplified resist process using extreme ultraviolet lithography [J] . Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani Japanese journal of applied physics . 2014,第7期

机译：随机缺陷产生对酸放大的量子效率和有效化学反应半径的影响，该化学反应使用极端紫外光刻技术进行化学放大的抗蚀剂工艺进行脱保护
2. Theoretical study on effects of electron thermal energy on sensitization process of chemically amplified electron beam resists-contribution to resist heating effect in electron beam mask writing [J] . Kozawa Takahiro, Tamura Takao Japanese journal of applied physics . 2019,第11期

机译：电子热能对化学放大电子束抗蚀剂敏化过程的理论研究抵抗电子束罩写入中的加热效果
3. Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography [J] . Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Japanese journal of applied physics . 2010,第11期

机译：从用于极端紫外光刻的化学放大抗蚀剂的线和空间图案中提取抗蚀剂参数
4. Effective OPC Pattern Generation using Chemically Amplified Resist for 0.13 mu m Design Rule Masks [C] . Il-Ho Lee, Kyung-Han Nam, Hong-Suk Kim Conference on photomask and next-generation lithography mask technology . 2000

机译：使用化学放大的抗蚀剂有效生成OPC图案，用于0.13微米设计规则掩模
5. Surface chemistry study of gallium arsenide wafers during chemically amplified resist patterning and resist studies with fluorescence. [D] . Lu, Bing. 2000

机译：砷化镓晶片的表面化学研究在化学放大的抗蚀剂构图过程中进行，并通过荧光进行抗蚀剂研究。
6. Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake [O] . Hidetatsu Miyoshi, Jun Taniguchi -1

机译：通过使用非化学放大的抗蚀剂和曝光后烘烤来制造具有改善的线边缘粗糙度的高分辨率掩模
7. Simulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication [O] . Benjamen M. Rathsack, Cyrus E. Tabery, Timothy B. Stachowiak, 2008

机译：基于模拟的257 nm激光掩模制造中非化学放大抗蚀剂的配方

Effective OPC Pattern Generation using Chemically Amplified Resist for 0.13 mu m Design Rule Masks

摘要

著录项

相似文献

相关主题

期刊订阅