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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Advances in screen printing metallization for a-Si:H/c-Si heterojunction solar cells
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Advances in screen printing metallization for a-Si:H/c-Si heterojunction solar cells

机译：a-Si：H / c-Si异质结太阳能电池丝网印刷金属化的进展

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Amorphous / crystalline silicon heterojunction is the most attractive technique to obtain high efficiency solar cells. Usually such a kind of cells is produced starting from n-type silicon wafers, because of several advantages, like the high bulk lifetime and the possibility to easily contact the n-type base with i-n amorphous layers. The emitter is usually covered by Transparent Conductive Oxides (TCO) which works as high conductive layer and Anti Reflection Coating (ARC). The device is completed by a metal grid, made by screen printed silver, sintered at low temperature. Both the TCO and the grid strongly influence the final cell series resistance, and consequently the cell efficiency. When p-type wafer is adopted as substrate for heterojunction cell, the base contact is more difficult to obtain because of the energy bands alignment between the c-Si and the p-type a-Si:H layer. Recently n-type doped SiOx layer has attracted interest as emitter layer in heterojunction device, therefore in this work we show the results obtained on the metallization of n-type SiOx/ptype c-Si heterojunction solar cells by means of low temperature screen printing technique. In particular a new kind of low temperature sintering (< 200°C) screen printable silver paste has been developed able to ensure high linear conductivity, low specific contact resistivity and strong adhesion to TCO's. We present electrical characterization using Transfer Length Method (TLM) technique. Since the base contact of SiO/c-Si heterojunction is ensured by laser doping technique starting from p-type a-Si:H layer, we also show how the screen printed Ag paste can enhance the base contact of this solar cell
机译：非晶/晶体硅异质结是获得高效太阳能电池的最有吸引力的技术。通常，由于几种优点，例如高体积寿命以及使n型基底容易与i-n非晶层接触的可能性，通常从n型硅晶片开始生产这种电池。发射极通常被透明导电氧化物（TCO）覆盖，该氧化物可用作高导电层和抗反射涂层（ARC）。该设备由金属网完成，该金属网由低温烧结的丝网印刷银制成。 TCO和栅极都强烈影响最终的电池串联电阻，进而影响电池效率。当采用p型晶片作为异质结电池的衬底时，由于c-Si与p型a-Si：H层之间的能带对准而更难以获得基极接触。最近，n型掺杂的SiOx层作为异质结器件中的发射极层引起了人们的关注，因此，在这项工作中，我们展示了通过低温丝网印刷技术对n型SiOx / p型c-Si异质结太阳能电池进行金属化的结果。特别是，已经开发出一种新型的低温烧结（<200°C）可丝网印刷的银浆，能够确保高线性电导率，低比接触电阻率和对TCO的强粘附性。我们介绍使用传输长度方法（TLM）技术的电气表征。由于SiO / c-Si异质结的基极接触是通过从p型a-Si：H层开始的激光掺杂技术来确保的，因此我们还展示了丝网印刷的Ag糊剂如何增强该太阳能电池的基极接触

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