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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Residual dopant levels in silicon feedstock grown by pilot-scale atmospheric pressure iodine vapor transport
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Residual dopant levels in silicon feedstock grown by pilot-scale atmospheric pressure iodine vapor transport

机译：通过中试规模的大气压碘蒸气传输而生长的硅原料中的残留杂质水平

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The atmospheric pressure iodine vapor transport method for polysilicon feedstock generation from metallurgical-grade silicon was introduced in 2002. More recent industrial pilot-scale development of the process has produced feedstock with improved electrically-active impurity control. Czochralski single crystal growth was carried out using relatively recent polysilicon produced by this method. The polysilicon was found to produce n-type single crystal material with some compensating p-type component. The resistivity data could be approximately fit to normal freezing curves with initial P and B concentrations of C = 1.1 × 10 and C = 3.3 × 10 atoms·cm respectively.
机译：从2002年冶金级硅生产多晶硅原料的大气压碘蒸气传输方法被引入。该工艺的最新工业中试规模开发已经生产了具有改进的电活性杂质控制的原料。直拉单晶生长是使用​​通过这种方法生产的相对较新的多晶硅进行的。发现该多晶硅可生产具有某些补偿性p型成分的n型单晶材料。电阻率数据可以近似拟合正常的冻结曲线，初始的P和B浓度分别为C = 1.1×10和C = 3.3×10原子·cm。

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