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Fabrication of graphene interdigitated electrodes and all-carbon electronic devices

机译：石墨烯叉指电极和全碳电子器件的制造

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Graphene has been widely studied because of its high mobility, superior mechanical properties and excellent thermal and chemical stability. This paper describes a novel and flexible method to fabricate graphene interdigitated electrodes and all-carbon field effect transistor (FET). In this approach, graphene is first grown by chemical vapor deposition (CVD) and assembled onto a microelectrode chip. Then, an atomic force microscopy (AFM) based mechanical machining method is employed to cut the graphene into interdigitated electrodes with nanogaps. Finally, single-walled carbon nanotubes (SWCNTs) are assembled onto the graphene interdigitated electrodes using dielectrophoresis to complete the FET device. The electrical properties of the fabricated SWCNT-graphene FET were investigated, and the I-V curves demonstrated the p-type nature of SWCNTs in the FET.
机译：石墨烯因其高迁移率，优异的机械性能以及出色的热稳定性和化学稳定性而被广泛研究。本文介绍了一种新颖而灵活的方法来制造石墨烯叉指式电极和全碳场效应晶体管（FET）。在这种方法中，首先通过化学气相沉积（CVD）生长石墨烯，然后将其组装到微电极芯片上。然后，采用基于原子力显微镜（AFM）的机械加工方法将石墨烯切割成具有纳米间隙的叉指电极。最后，使用介电电泳将单壁碳纳米管（SWCNT）组装到石墨烯叉指电极上，以完成FET器件。研究了所制备的SWCNT-石墨烯FET的电性能，其I-V曲线证明了FET中SWCNT的p型性质。

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