3-D simulation of charge collection in double-gate MOSFET under low-energy proton irradiation

机译：低能质子辐照下双栅MOSFET电荷收集的3-D模拟

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The charge collection in 20 nm double-gate MOSFET (DG MOSFET) submitted to low-energy Proton irradiation are investigated in this paper. The drain current transient and charge collection with different doping levels are simulated. Different strike radii and locations are also discussed in the paper.

机译：本文研究了低能质子辐照在20 nm双栅MOSFET（DG MOSFET）中的电荷收集情况。模拟了不同掺杂水平的漏极电流瞬态和电荷收集。本文还讨论了不同的打击半径和位置。

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《IEEE International Nanoelectronics Conference》|2016年|1-2|共2页
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Shaoan Yan; Wanli Zhang; Gang Li; Yihna Chen; Minghua Tang; Zheng Li;
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Hafnium;

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1. 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation [J] . Munteanu D., Autran J.-L. Nuclear Science, IEEE Transactions on . 2012,第4期

机译：重离子辐照下无结双栅极MOSFET中双极放大的3-D数值模拟
2. Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs [J] . Castellani-Coulie K., Munteanu D., Autran J.L., IEEE Transactions on Nuclear Science . 2005,第6期

机译：双栅极MOSFET中重离子辐照引起的双极放大的仿真分析
3. Study on evolution of deep charge traps in polyimide irradiated by low-energy protons using photo-stimulated discharge technique [J] . Yue L., Wang X., Wu Y., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第14期

机译：利用光激发放电技术研究低能质子辐照聚酰亚胺中深电荷陷阱的演化
4. 3-D simulation of charge collection in double-gate MOSFET under low-energy proton irradiation [C] . Shaoan Yan, Wanli Zhang, Gang Li, IEEE International Nanoelectronics Conference . 2016

机译：低能量质子辐射下双闸MOSFET中电荷收集的3-D仿真
5. Compact modeling of double-gate MOSFETs. [D] . Lu, Huaxin. 2006

机译：双栅极MOSFET的紧凑模型。
6. Performance of arsenene and antimonene double-gate MOSFETs from first principles [O] . Giovanni Pizzi, Marco Gibertini, Elias Dib, -1

机译：首要原理的砷和锑双栅极MOSFET的性能
7. Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation [O] . Daniela Munteanu, Jean-Luc Autr 2014

机译：3-D数值模拟对无连接双栅MOSFET重离子照射的敏感性的研究

3-D simulation of charge collection in double-gate MOSFET under low-energy proton irradiation

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