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Non-destructive defect detection for MEMS devices using transient thermography

机译:使用瞬态热成像技术的MEMS器件无损检测

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This paper investigates the use of transient infrared thermography in a transmission mode for subsurface defect detection within thin multilayer structures such as those found in MEMS devices. This was undertaken through the use of finite element analysis based simulations for several sizes of defects and for several combinations of substrate and thin film materials. The maximum temperature difference observable at the sample surface between defective and non-defective regions of the sample was investigated as a function of various parameters of the sample materials and defect geometry.
机译:本文研究了在透射模式下使用瞬态红外热成像技术在诸如MEMS器件中发现的薄多层结构中进行亚表面缺陷检测的方法。这是通过使用基于有限元分析的几种缺陷尺寸以及基材和薄膜材料的几种组合进行的模拟来完成的。研究了样品的有缺陷和无缺陷区域之间在样品表面可观察到的最大温差,它是样品材料和缺陷几何形状的各种参数的函数。

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