The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs

机译：栅槽式Al2O3 / AlGaN / GaN MOS-HEMT中Al2O3层和刻蚀深度对2DEG片密度的影响机理。

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Capacitance-voltage (C-V) characteristics have been measured in this paper to calculate the depth profiles of GaN carrier concentration in four different structure GaN-based HEMTs, revealing the consequences of AlO oxide layer and etching depth on two-dimensional electron gas (2DEG) sheet density. Combining the energy band diagrams with the theoretical calculation formula of 2DEG, we analyzed corresponding influence mechanism systematically.

机译：本文测量了电容电压（CV）特性，以计算四种不同结构的GaN基HEMT中GaN载流子浓度的深度曲线，揭示了AlO氧化物层和蚀刻深度对二维电子气（2DEG）的影响片材密度。结合能带图和2DEG的理论计算公式，系统地分析了相应的影响机理。

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《IEEE International Conference on Solid-State and Integrated Circuit Technology》|2016年|1059-1061|共3页
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Peng Li; Yan-Rong Cao; Feng Dai; Ya-Song Zhang; Qing Zhu; Ling Lv; Xiao-Hua Ma; Yue Hao;
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关键词
HEMTs; MODFETs; Etching; Logic gates; Gallium nitride; Capacitance; Physics;

机译：HEMT; MODFET;蚀刻;逻辑门;氮化镓;电容;物理;

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专利

1. Impact of AIN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs [J] . Acurio E., Crupi F., Magnone P., Microelectronic Engineering . 2017,第juna期

机译：夹在GaN和Al2O3层之间的AIN层对凹陷的AlGaN / GaN MOS-HEMT的性能和可靠性的影响
2. Study of Gate Leakage Current on AlGaN/GaN MOS-HEMTs with Atomic Layer Deposited Al2O3 Gate Oxide [J] . Ouduangvilai Konepachith, Lee Hoon-Ki, Janardhanam Vallivedu, Nature reviews Cancer . 2019,第6期

机译：用原子层沉积Al2O3栅极氧化物AlGaN / GaN MOS-HEMT栅极漏电流研究
3. Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments? [J] . Si-Qi Jing, Xiao-Hua Ma, Jie-Jie Zhu, 中国物理：英文版 . 2020,第010期

机译：采用不同的蚀刻后表面处理的常关型Al2O3 / AlGaN / GaN MOS-HEMT中的界面和边界俘获效应？
4. The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs [C] . Peng Li, Yan-Rong Cao, Feng Dai, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：Al2O3层和蚀刻深度对栅极凹陷Al2O3 / AlGaN / AlGaN / GaN MOS-HEMT中2deg薄片密度的影响机理
5. Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure [O] . Vladimir Lucian Ene, Doru Dinescu, Iulia Zai, 2019

机译：GaN / Al2O3异质结构中边缘和螺钉位错密度的研究
6. Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density [O] . Ťapajna Milan, Válik Lukáš, Gucmann Filip, 2017

机译：用于GaN / AlGaN / GaN MOS HEMT的低温原子层沉积生长的Al2O3栅极电介质：沉积条件对界面态密度的影响

The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs

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