Behavioral modeling of drain current of an avalanche ISFET near breakdown

机译：雪崩IsFET的排水电流的行为建模

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A physical operation-based drain current model is developed for novel avalanche ISFET (A-ISFET). Mobility degradation effect has been included into the model. The avalanche breakdown effects are modeled by using a previously developed impact ionization based finite multiplication breakdown model. Comparisons are made with SPICE simulation and experimental measured results, and a very good match is found across breakdown region of operation.

机译：开发了一种基于物理操作的漏极电流模型，用于新型雪崩ISFET（A-ISFET）。移动性劣化效应已包含在模型中。通过使用先前显影的基于影响的电离的有限乘法击穿模型来建模雪崩击穿效果。使用Spice仿真和实验测量结果进行比较，并且在崩溃的操作区域中发现了非常好的匹配。

著录项

来源
《IEEE International System-on-Chip Conference》|2016年|1 v.|共5页
会议地点
作者
Mohammad M Uzzal; Payman Zarkesh-Ha; Paul Szauter; Jeremy Edwards;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类通信;
关键词
Electric breakdown; Impact ionization; Breakdown voltage; Mathematical model; Semiconductor device modeling; Substrates; SPICE;

机译：电阻;冲击电离;击穿电压;数学模型;半导体器件建模;基板;香料;

相似文献

外文文献
中文文献
专利

1. On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications [J] . Reisch M. IEEE Transactions on Electron Devices . 1992,第6期

机译：雪崩状态建模中双极型晶体管的双稳态行为和开基击穿的研究
2. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown [J] . E. Miranda, T. Kawanago, K. Kakushima, Microelectronics & Reliability . 2012,第9a10期

机译：具有严重的栅漏介电击穿性能的高级nMOSFET器件的栅极泄漏电流的分析和建模
3. An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling [J] . Deukhyoun Heo, Gebara E. IEEE Transactions on Microwave Theory and Techniques . 2000,第12期

机译：具有新的击穿电流模型和漏-衬底非线性耦合的改进型深亚微米MOSFET RF非线性模型
4. Behavioral modeling of drain current of an avalanche ISFET near breakdown [C] . Mohammad M Uzzal, Payman Zarkesh-Ha, Paul Szauter, IEEE International System-on-Chip Conference . 2016

机译：雪崩ISFET击穿附近的漏极电流行为建模
5. Modeling and optimization of heterojunction avalanche photodiodes: Noise, speed and breakdown. [D] . Kwon, Ohhyun. 2004

机译：异质结雪崩光电二极管的建模和优化：噪声，速度和击穿。
6. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage [O] . Yachao Zhang, Yifan Li, Jia Wang, 2020

机译：具有改善的漏极电流密度和高击穿电压的高性能AlGaN双通道HEMT
7. RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile [O] . Jun Zhang, Yufeng Guo 2020

机译：Algan / GaN Hemts中的Resurf原理：通过有效浓度剖面，准确的1-D造型在非州雪崩击穿行为上进行建模
8. Avalanche-Induced Drain-Source Breakdown in Silicon-on-Insulator n-MOSFET's [R] . Young, K. K., Burns, J. A. 1988

机译：绝缘体上硅n-mOsFET中的雪崩引起的漏源击穿

Behavioral modeling of drain current of an avalanche ISFET near breakdown

摘要

著录项

相似文献

相关主题

期刊订阅