A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters

机译：用于超低压比较器和电平转换器的虚拟III-V隧道FET技术平台

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In this paper, a III-V nanowire TFET technology platform is compared against the predictive technology models of FinFETs at 10 nm node by evaluating the performance of two different comparator topologies. Furthermore, the potential of a hybrid FinFET/TFET approach in multi supply voltage design is addressed by considering level shifter circuits. Both analyses confirm that III-V TFET represents a promising technology option for future integrated circuits with sub-0.4 V operation.

机译：在本文中，通过评估两种不同比较器拓扑的性能，将III-V纳米线TFET技术平台与FinFET在10 nm节点的预测技术模型进行了比较。此外，通过考虑电平转换器电路，可以解决多电源电压设计中混合FinFET / TFET方法的潜力。两项分析均证实，III-V TFET代表了未来以低于0.4 V工作的集成电路的有前途的技术选择。

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《Conference on Ph.D. Research in Microelectronics and Electronics》|2017年|145-148|共4页
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Francesco Settino; Marco Lanuzza; Sebastiano Strangio; Felice Crupi; Pierpaolo Palestri; David Esseni;
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TFETs; FinFETs; Integrated circuit modeling; Topology; Capacitance; Delays; Electric potential;

机译：TFET; FinFET;集成电路建模;拓扑;电容;延迟;电势;

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专利

1. Tunnel FETs for Ultra-Low Voltage Digital VLSI Circuits: Part II–Evaluation at Circuit Level and Design Perspectives [J] . Alioto M., Esseni D. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on . 2014,第12期

机译：用于超低压数字VLSI电路的隧道FET：第二部分–电路级评估和设计角度
2. An Ultra-Low Voltage Level Shifter Using Revised Wilson Current Mirror for Fast and Energy-Efficient Wide-Range Voltage Conversion from Sub-Threshold to I/O Voltage [J] . Zhou Jun, Wang Chao, Liu Xin, Circuits and Systems I: Regular Papers, IEEE Transactions on . 2015,第3期

机译：使用修订的Wilson电流镜的超低电压电平转换器，可实现从亚阈值到I / O电压的快速节能节能宽范围电压转换
3. Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits [J] . Strangio S., Palestri P., Lanuzza M., Solid-State Electronics . 2017,第FEBa期

机译：考虑基本算术电路的III-V TFET技术平台针对10-nm CMOS FinFET技术节点的基准测试
4. A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters [C] . Francesco Settino, Marco Lanuzza, Sebastiano Strangio, Conference on Ph.D. Research in Microelectronics and Electronics . 2017

机译：用于超低电压比较器和电平移位器的虚拟III-V隧道FET技术平台
5. Ultra-Low Voltage Wide Bandwidth Substrate Removed III-V Electro-optic Modulators. [D] . Dogru, Selim. 2013

机译：超低电压宽带基板移除的III-V电光调制器。
6. The Importance of Measurement Precision and Behavioral Homologies in Evaluating the Behavioral Consequences of Fetal Ethanol Exposure : Commentary on Williams et al. (Sensory-Motor Deficits in Children with Fetal Alcohol Spectrum Disorder Assessed Using a Robotic Virtual Reality Platform) [O] . Derek Alexander Hamilton -1

机译：测量精度和行为同源性在评估胎儿乙醇暴露行为后果中的重要性：Williams等人的评论。（使用机器人虚拟现实平台评估的胎儿酒精频谱异常儿童的感觉-运动缺陷）
7. Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits [O] . Sebastiano Strangio, Pierpaolo Palestri, Marco Lanuzza, 2016

机译：低功耗数字电路INAS / AlGASB隧道虚拟技术平台评估

A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters

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