A 310-GHz Fundamental Oscillator with 0.4-mW Output Power and 3.2 dc-to-RF Efficiency in 65-nm CMOS

机译：在65nm CMOS中具有0.4mW输出功率和3.2％DC-RF效率的310GHz基本振荡器

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This paper presents a 310-GHz fundamental oscillator with a differential T-embedding network. An on-chip transformer acts part of an embedding component and produces a single-ended output. The design is implemented in 65-nm CMOS process, occupying a core area of 0.01 μm². The oscillator generates 0.4-mW output power from two 16-μm transistor while drawing 10.39-mA current from a 1.2-V power supply, corresponding to a 3.2% dc-to-RF efficiency. To the best of the author's knowledge, this oscillator provides the highest fundamental frequency in CMOS with high output power and dc-to-RF efficiency.

机译：本文提出了具有差分T嵌入网络的310 GHz基本振荡器。片上变压器充当嵌入组件的一部分，并产生单端输出。该设计采用65 nm CMOS工艺实现，占用的核心面积为0.01μm ^{2
。该振荡器从两个16μm晶体管产生0.4mW输出功率，同时从1.2V电源汲取10.39mA电流，相当于3.2％的DC-RF效率。据作者所知，该振荡器以高输出功率和DC-RF效率提供了CMOS中最高的基频。}

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《IEEE Wireless and Microwave Technology Conference》|2019年|1-4|共4页
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Jingjun Chen; Hao Wang; Xiaoguang Liu;
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Oscillators; Power generation; CMOS technology; Transistors; Capacitors; Inductors; Logic gates;

机译：振荡器;发电; CMOS技术;晶体管;电容器;电感器;逻辑门;

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1. A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output [J] . Stefan Shopov, Andreea Balteanu, Juergen Hasch, IEEE Journal of Solid-State Circuits . 2016,第9期

机译：一个234-261-GHz 55-nm SiGe BiCMOS信号源，具有5.4-7.2 dBm的输出功率，1.3％的DC-RF效率和1GHz的分频输出
2. A 19.5% Efficiency 51–73-GHz High-Output Power Frequency Doubler in 65-nm CMOS [J] . Chen Zhilin, Yu Yiming, Wu Yunqiu, IEEE microwave and wireless components letters . 2019,第12期

机译：19.5％效率51-73-GHz高输出功率倍增65-NM CMOS
3. A 300-GHz Fundamental Oscillator in 65-nm CMOS Technology [J] . Razavi B. Solid-State Circuits, IEEE Journal of . 2011,第4期

机译：采用65nm CMOS技术的300GHz基本振荡器
4. A 310-GHz Fundamental Oscillator with 0.4-mW Output Power and 3.2 dc-to-RF Efficiency in 65-nm CMOS [C] . Jingjun Chen, Hao Wang, Xiaoguang Liu IEEE Wireless and Microwave Technology Conference . 2019

机译：310GHz基本振荡器，输出功率0.4-MW输出功率和3.2％的直流至RF效率在65纳米CMOS中
5. A Charge Pump Architecture with High Power-Efficiency and Low Output Ripple Noise in 0.5 mum CMOS Process Technology. [D] . Modi, Primit. 2012

机译：采用0.5 um CMOS工艺技术的具有高功率效率和低输出纹波噪声的电荷泵架构。
6. A Low-Power All-Digital on-Chip CMOS Oscillator for a Wireless Sensor Node [O] . Duo Sheng, Min-Rong Hong 2016

机译：用于无线传感器节点的低功耗全数字片上CMOS振荡器
7. A 300-GHz Fundamental Oscillator in 65-nm CMOS Technology 1 [O] . Behzad Razavi 2010

机译：采用65nm CMOS技术的300GHz基本振荡器1

A 310-GHz Fundamental Oscillator with 0.4-mW Output Power and 3.2 dc-to-RF Efficiency in 65-nm CMOS

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