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500°C SiC-based driver IC for SiC power MOSFETs

机译：用于SiC功率MOSFET的500°C SiC基驱动器IC

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摘要

This paper reports on a SiC BJT-based driver IC for driving SiC power MOSFETs operational from room temperature up to 500° C. The driver features design simplicity, smaller chip size, smaller propagation delay, and relatively high driving currents compared to similar SiC-based drivers. These properties are due to its fewer number of gain buffer stages and relatively higher transconductance of the BJTs as compared to SiC MOSFETs. The high-temperature operation of the driver, as well as the other advantages of the SiC BJT-based driver, suggest it as a viable candidate to be integrated with SiC MOSFETs in a power module.
机译：本文报道了一种基于SiC BJT的驱动器IC，用于驱动从室温到500°C的SiC功率MOSFET。与类似的SiC-MOSFET相比，该驱动器具有设计简单，芯片尺寸小，传播延迟小以及驱动电流高的特点基础的驱动程序。这些特性是由于与SiC MOSFET相比，它的增益缓冲级数更少以及BJT的跨导性更高。驱动器的高温操作以及基于SiC BJT的驱动器的其他优点表明，它是与功率模块中的SiC MOSFET集成的可行选择。

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