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首页> 外文期刊>IEEE Transactions on Power Electronics >Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers
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Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers

机译：SIC电源MOSFET上的栅极漏电流监控：智能栅极驱动器的估计方法

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摘要

Silicon Carbide (SiC) power transistors are more and more used in electric energy conversion systems. SiC power semiconductors devices, such as SiC metal-oxide-semiconductor field-effect transistor (mosfet) can operate at higher frequency and higher temperature compared to Silicon power mosfet or insulated-gate bipolar transistor. However, the maturity of the SiC technology is moderate compared to the well-known Silicon-based power semiconductor devices. Recent research works on reliability of SiC power mosfet identified gate leakage currents as an ageing indicator. The monitoring of ageing indicators during normal operation may definitely help to predict damages and simplify the maintenance on the energy conversion systems. Due to the low amplitude of gate leakage currents, its direct measurement is difficult even under laboratory conditions and requires an offline characterization. This article presents a new method for estimating the gate leakage current using the gate drive circuit. The proposed method takes advantage of the internal structure of the typical gate drivers used to command SiC power mosfets.
机译：碳化硅（SiC）功率晶体管越来越多地用于电能转换系统。与硅功率MOSFET或绝缘栅双极晶体管相比，SiC金属氧化物半导体场效应晶体管（MOSFET）可以以较高的频率和更高的温度操作。然而，与众所周知的硅基功率半导体器件相比，SiC技术的成熟度是中央的。最近的研究适用于SIC功率MOSFET的可靠性确定的栅极漏电流作为老化指示器。在正常运行期间对老化指标的监测可能肯定有助于预测损害并简化对能量转换系统的维护。由于栅极泄漏电流的幅度低，即使在实验室条件下，其直接测量也是困难的，并且需要离线表征。本文介绍了一种使用栅极驱动电路估计栅极漏电流的新方法。所提出的方法利用了用于命令SIC功率MOSFET的典型栅极驱动器的内部结构。

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