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A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing

机译:针刺中的针:用于优化纳米线激光的功能不均匀性

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Ⅲ-Ⅴ semiconductor nanowires allow easy hetero-integration of optoelectronic components onto silicon due to efficient strain relaxation, well-understood design approaches and scalability. However continuous room temperature lasing has proven elusive. A key challenge is performing repeatable single-wire characterization - each wire can be different due to local growth conditions present during bottom-up growth. Here, we describe an approach using large-scale population studies which exploit inherent inhomogeneity to understand the complex interplay of geometric design, crystal structure, and material quality. By correlating nanowire length with threshold for hundreds of nanowire lasers, this technique reveals core-reabsorption as the critical limiting process in multiple-quantum-well nanowire lasers. By incorporating higher band-gap nanowire core, this effect is eliminated, providing reflectivity dominated behavior.
机译:Ⅲ-ⅴ半导体纳米线允许通过有效的应变弛豫,良好的设计方法和可扩展性,易于将光电子组件的杂函数整合到硅上。然而,连续的室温激光已被证明是难以捉摸的。关键挑战正在执行可重复的单线表征 - 由于在自下而上增长期间存在的局部生长条件,每根线可以不同。在这里,我们描述了一种使用大规模人口研究的方法,该研究利用固有的不均匀性来了解几何设计,晶体结构和材料质量的复杂相互作用。通过将纳米线长度与数百纳米线激光器的阈值相关,该技术揭示了作为多量子孔纳米线激光器中的核损伤作为关键限制过程的核心重吸收。通过掺入更高的带间隙纳米线芯,消除了这种效果,提供了反射率的主导行为。

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