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Development of a W/Si thin film for the single-layered attenuated phase-shifting mask for 248-nm lithography

机译:用于248 nm光刻的单层衰减相移掩模的W / Si薄膜的开发

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Abstract: A novel material system of W/Si film which consisted of W, Si and their oxides has been developed for the single-layered attenuated phase- shifter (SAttPS) for the KrF excimer laser lithography. The W/Si film was deposited on quartz substrate by an RF sputtering, using WSi$-2$/ as a target and Ar and O$-2$/ mixtures as sputtering gases. The W/Si film has been shown to have excellent properties for the SAttPS such as controllability of the optical transmittance, electric conductivity, chemical durability and adequate adhesion to quartz substrate, in the same way as the film for i-line lithography previously reported. As- deposited W/Si film with the thickness of 975 angstrom and the transmittance of 7.1% at 248 nm showed no changes in the refractive index and some changes in the extinction coefficient after the KrF excimer laser irradiation up to 200 kJ/cm$+2$/. Annealing at 350$DGR@C for 60 min under atmospheric He environment, however, let to no degradation in the extinction coefficient after the laser irradiation. The annealed W/Si film is expected to be a promising material of the KrF SAttPS.!3
机译:摘要:针对KrF受激准分子激光光刻技术的单层衰减移相器(SAttPS),开发了一种由W,Si及其氧化物组成的W / Si膜新型材料体系。通过RF溅射将W / Si膜沉积在石英基板上,使用WSi $ -2 $ /作为靶并且使用Ar和O $ -2 $ /的混合物作为溅射气体。与先前报道的用于i-线平版印刷的膜相同,已显示出W / Si膜具有优异的SAttPS性能,例如可控的透光率,电导率,化学耐久性和对石英衬底的充分粘附性。沉积的W / Si膜厚度为975埃,在248 nm处的透射率为7.1%,在KrF准分子激光照射到200 kJ / cm $ +后,折射率没有变化,消光系数也有变化。 2 $ /。但是,在大气氦气环境下,在350 $ DGR @ C的温度下退火60分钟,激光照射后消光系数不会降低。退火的W / Si薄膜有望成为KrF SAttPS的有前途的材料!3

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