Abstract: A higher quality electron beam (EB) mask lithography system is now required in an advanced field aimed at 1 Gbit DRAM chips. For this purpose, photomask accuracies of 0.03 $mu@m to 0.02 $mu@m are needed, for the feasibility of an EB lithography system with these accuracy levels is discussed. The error sources of a commercial EB lithography system with a variable shaped beam system and step and repeat writing strategy are examined. The development plans to minimize these errors are described and early results, specifically the field stitching error, obtained from these developments are shown. The mean stitching error was $POM 0.023 $mu@m and the random stitching error was $POM 0.030 $mu@m. From the analysis of error budget, it is shown that a field stitching accuracy level of 0.02 $mu@m will be attainable after the completion of above-mentioned development plans.!1
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机译：摘要：在针对1 Gbit DRAM芯片的先进领域中，现在需要更高质量的电子束（EB）掩模光刻系统。为此目的，需要光掩模精度为0.03μm至0.02μm，以讨论具有这些精度水平的EB光刻系统的可行性。研究了具有可变形状光束系统的商业EB光刻系统的误差源以及步进和重复写入策略。描述了最小化这些错误的开发计划，并显示了从这些开发中获得的早期结果，尤其是现场缝合错误。平均缝合误差为$ POM 0.023 $ mu @ m，随机缝合误差为$ POM 0.030 $ mu @ m。从错误预算的分析中可以看出，在完成上述开发计划后，将达到0.02 $μm的现场拼接精度。
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