A higher quality electron beam (EB) mask lithography system is now required in an advanced field aimed at 1 Gbit DRAM chips. For this purpose, photomask accuracies of 0.03 $mu@m to 0.02 $mu@m are needed, for the feasibility of an EB lithography system with these accuracy levels is discussed. The error sources of a commercial EB lithography system with a variable shaped beam system and step and repeat writing strategy are examined. The development plans to minimize these errors are described and early results, specifically the field stitching error, obtained from these developments are shown. The mean stitching error was $POM 0.023 $mu@m and the random stitching error was $POM 0.030 $mu@m. From the analysis of error budget, it is shown that a field stitching accuracy level of 0.02 $mu@m will be attainable after the completion of above-mentioned development plans.
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机译：现在在针对1 Gbit DRAM芯片的高级领域中需要更高质量的电子束（EB）掩模光刻系统。为此，需要光掩模精度为0.03 $ @ m至0.02 $ mu @ m，以便讨论EB光刻系统的可行性，这些精度水平是如此。研究了具有可变形状光束系统的商业EB光刻系统的误差源和步骤和重复写入策略。描述了最小化这些误差的发展计划，并显示了从这些发展获得的现场缝合误差。平均缝合误差是$ POM 0.023 $ MU @ M和随机拼接错误是$ POM 0.030 $ MU @ M。从错误预算的分析中，显示在完成上述开发计划之后将可以实现0.02 $ MU @ M的现场拼接精度等级。
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