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Electrical characterization of across-field lithographic performance for 256-Mbit DRAM technologies

机译：256 Mb DRAM技术的跨场光刻性能的电学表征

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Abstract: Lithographic performance has typically been evaluated at a single point within the stepper field. However, this evaluation method does not completely provide the total lithographic performance on a chip because of variations introduced by the stepper as well as the reticle. In this paper, the evaluation method and characteristics of across-field performance are shown through the use of electrical line width measurements and exposure-defocus (ED) analysis. The across-field performance is analyzed by both the average process window and the common process window for two resolution enhanced photolithography techniques: phase-shifting mask (PSM) and off-axis illumination (OAI). The average process window corresponds to a single-point evaluation while the common process window includes all lithographic fluctuations across the field. Consequently, the common process window is much smaller than the average process window. Moreover, to consider the effect of mask critical dimension (CD) deviation on lithographic performance, a mask CD deviation enhancement factor (MEF) is introduced. By MEF correction, the contribution of mask CD deviation to common window degradation is obtained.!8
机译：摘要：平版印刷性能通常是在步进器领域中的单个点进行评估的。但是，由于步进器和分划板会引起变化，因此该评估方法无法完全在芯片上提供总体光刻性能。在本文中，通过使用电线宽度测量和曝光散焦（ED）分析显示了评估方法和跨场性能的特征。跨场性能通过两种分辨率增强光刻技术的平均工艺窗口和通用工艺窗口进行分析：相移掩模（PSM）和离轴照明（OAI）。平均过程窗口对应于单点评估，而公共过程窗口包括整个场上的所有光刻波动。因此，通用过程窗口比平均过程窗口小得多。此外，为了考虑掩模临界尺寸（CD）偏差对光刻性能的影响，引入了掩模CD偏差增强因子（MEF）。通过MEF校正，获得了掩膜CD偏差对常见窗口退化的贡献。！8

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