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New phase-shifting mask technology for quarter-micron photolithography

机译：用于四分之一微米光刻的新相移掩模技术

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Abstract: A new phase shifting mask technology that will remarkable improve the resolution of photolithography is proposed. This new phase shifting mask has a two layer structure, which consists of a ordinary transmission pattern substrate and a phase shifting pattern substrate. These two substrates are fabricated independently. Then, two substrates are overlapped with each other. The imaging plane of the projection lens using this phase shifting mask is shifted by a small amount to the projection lens. However, this mask is very little spherical aberration. In addition, particles on the back surface of the transmission pattern substrate and the phase shifting pattern substrate are prevented from being transferred. Then, a quarter micron resist pattern can be obtained even by an i-line stepper with a resolution capability of 0.45 $mu@m. This new phase shifting mask is an extremely attractive tool for quarter micron photolithography.!5
机译：摘要：提出了一种新的相移掩模技术，它将显着提高光刻的分辨率。这种新的相移掩模具有两层结构，其由普通的透射图案基板和相移图案基板组成。这两个基板是独立制造的。然后，两个基板彼此重叠。使用该相移掩模的投影透镜的成像平面向投影透镜偏移少量。但是，该掩模的球差很小。另外，防止了透射图案基板和相移图案基板的背面上的颗粒被转印。然后，甚至通过具有0.45μm的分辨能力的i线步进器也可以获得四分之一微米的抗蚀剂图案。这种新的相移掩模是用于四分之一微米光刻的极具吸引力的工具！！ 5

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