Application of phase-shift mask to GaAs IC fabrication process

机译：相移掩模在GaAs IC制造工艺中的应用

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Abstract: To obtain stable light contrast, a pattern accuracy,alignment accuracy and irradiation resistance of SOGhave been investigated, and pattern layout has beenoptimized for the subresolution PSM and edge-line PSM.Satisfactory pattern accuracy and no deterioration intransmissivity index during exposure of 500,000J/cm$+2$/ have been confirmed on fabricated PSMs.Applying these PSMs to GaAs IC process, a fine gatefinger pattern of 0.3 $mu@m has successfully beenformed without generation of undesirable pattern in thejoint area of gate finer and large area pad.!5

机译：摘要：为了获得稳定的光对比度，已经研究了SOG的图案精度，对准精度和耐辐照性，并对亚分辨率PSM和边缘线PSM的图案布局进行了优化.500,000J曝光期间图案精度令人满意，并且透射率指标没有劣化/ cm $ + 2 $ /已在制造的PSM上得到证实。将这些PSM应用于GaAs IC工艺中，成功地形成了0.3 $ mu @ m的精细栅指图形，而在栅较细和大面积焊盘的接合区域中没有产生不良图形。！5

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《Photomask and X-Ray Mask Technology II》|1995年|p.358-366|共9页
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Author(s): Yoshiki Kojima Mitsubishi Electric Corp. Itami-shi Hyogo Japan; Mitsunori Nakatani Mitsubishi Electric Corp. Hyogo Japan; Hirofumi Nakano Mitsubishi Electric Corp. Hyogo Japan; Kazuya Kamon Mitsubishi Electric Corp. Itami-shi Hyogo Japan; Kazuhiko Sato Mitsubishi Electric Corp. Itami Japan.;
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中图分类无线电电子学、电信技术;
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Application of phase-shift mask to GaAs IC fabrication process

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