Light-induced metastable defects or light-induced metastable H atoms in a-Si:H films?

机译：a-Si：H薄膜中的光诱导亚稳缺陷或光诱导亚稳H原子？

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In hydrogenated amorphous silicon (a-Si:H) films,the increase of the metastable defect density under high-intensity illumination is usually described by an empirical two-parameter stretched-exponential time dependence (characteristic time tau )_SE and dispersion parameter beta ).In this study,a clearly different (one-parameter) analytic function is obtained from a microscopic model based on the formation of metastable H (MSH) atoms in a-Si:H films.Assuming that MSH atoms are the only mobile species,only three chemical reactions are significant: MSH are produced from doubly hydrogenated (SiH HSi) configurations and trapped either at broken bounds or Si-H creation (LIC) of defects.Competition between trapping sites results in a saturation of N(t) at a steady-state value N_SS.A one-parameter fit of this analytical function to experimental data is generally good,indicating that the use of a statistical distribution of trap energies is not necessary.

机译：在氢化非晶硅（a-Si：H）薄膜中，高强度照明下亚稳态缺陷密度的增加通常由经验的两参数拉伸指数时间相关性（特征时间tau __SE和色散参数β）来描述在这项研究中，基于在a-Si：H膜中形成亚稳H（MSH）原子的微观模型，获得了明显不同的（单参数）解析函数。假设MSH原子是唯一的可移动物种，只有三个化学反应是重要的：MSH是由双氢化（SiH HSi）构型产生的，并被捕获在断裂的边界处或缺陷的Si-H产生（LIC）中。捕获位点之间的竞争导致N（t）处于饱和状态。稳态值N_SS。此分析函数与实验数据的单参数拟合通常很好，这表明不需要使用陷阱能的统计分布。

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《Symposium on amorphous and microcrystalline silicon technology》|1997年|p.79-84|共6页
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C.Godet;
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中图分类无线电电子学、电信技术;
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1. Light-induced defect creation in a-Si : H: Metastable defects or metastable H atoms? [J] . Godet C. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：a-Si中光致缺陷的产生：H：亚稳缺陷或亚稳H原子？
2. Light-induced relaxation of the metastable conductivity of undoped a-Si:H films illuminated at elevated temperatures [J] . Kurova I. A., Ormont N. N. Semiconductors . 2015,第5期

机译：光诱导的未掺杂a-Si：H薄膜在高温下的亚稳电导率弛豫
3. The nature of the defect states above midgap and their role in the light-induced metastability of a-Si : H [J] . Kounavis P Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第9a20期

机译：中间能隙以上的缺陷状态的性质及其在光诱导a-Si：H的亚稳中的作用
4. Light-induced metastable defects or light-induced metastable H atoms in a-Si:H films? [C] . C.Godet, Materials Research Socidety Symposium on amorphous and microcrystalline silicon technology . 1997

机译：A-Si：H薄膜中光诱导的亚稳态缺陷或光诱导的亚稳态H原子？
5. Light scattering studies of two systems. I.~Surface plasmon enhanced Brillouin scattering in silver films: Double resonance effect. II.~Relation of anomalous Raman spectra of gallium-arsenide to metastable transitions of EL2 defects. [D] . Robertson, William Michael. 1988

机译：两种系统的光散射研究。 I.〜表面等离激元增强了银膜中的布里渊散射：双重共振效应。 II。〜砷化镓的拉曼光谱异常与EL2缺陷的亚稳转变的关系。
6. Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films [O] . M. Precner, T. Polaković, Qiao Qiao, -1

机译：亚稳缺陷的演化及其对MoS2薄膜电子性能的影响
7. Metastable Defect Formation at Microvoids Identified as a Source of Light-Induced Degradation in a-Si:H [O] . Fehr M., Schnegg A., Rech B., 2014

机译：微孔处的亚稳态缺陷形成被确定为a-Si：H中光诱导降解的来源
8. Effects of Compensation on Light-Induced Metastable Defects in a-Si:H. [R] . Amer, N. M., Skumanich, A., Jackson, W. B. 1983

机译：补偿对a-si：H中光诱导亚稳缺陷的影响。

Light-induced metastable defects or light-induced metastable H atoms in a-Si:H films?

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