We investigated the transport and recombination behavir of pin solar cells based on microcrystalline silicon (uc-Si:H_).A ocmparison of experimental and simulated dat afo the dark I/V -curves,the I/V-behavior under Am 1.5 illumination as well as the quantum efficiency reveals an enhanced defect density in uc-Si:H compared to c-Si which could be located as defect rich rrain boundaries around the crystallites.
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