We have estimated the characteristic temperature T sub 0 of GaN-based vertical-cavity surfaceemitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T sub 0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.
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机译：我们已经估计了基于GaN的垂直腔面发射激光器的特征温度T sub 0。已经考虑了包括带内弛豫加宽的密度矩阵理论。估计的T sub 0为约300 K，这表明基于GaN的激光器具有良好的温度特性。
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