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首页> 外文会议>Symposium on GaN and related alloys >Comparative growth of AIN on singular and off-axis 6H and 4H-SiC by MOCVD
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Comparative growth of AIN on singular and off-axis 6H and 4H-SiC by MOCVD

机译：MOCVD在单轴和离轴6H和4H-SiC上AIN的比较生长

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摘要

A comparison study of the growth of aluminum nitride (AlN) single crystal epitaxy on 6H-SiC and 4H-SiC substrates has been performed. The material has been characterized using atomic force microscopy (AFM) and reflective high energy electron diffraction (RHEED). AlN crystals were deposited on the following 6H-SiC substrates: singular with and without an initial SiC epilayer, and 3.5 degree off-axis with and without an initial SiC epilayer. AlN crystals were deposited on 8.0 degree off-axis 4H-SiC with and without intial SiC epilayers. AFM shows that the deposition of AlN on 6H-SlC and 4H-SiC with an intial SiC epilaryer displays high quality quasi-two dimensional growth as atomically flat or step flow epitaxy.
机译：进行了氮化铝（AlN）单晶外延在6H-SiC和4H-SiC衬底上生长的比较研究。该材料已使用原子力显微镜（AFM）和反射型高能电子衍射（RHEED）进行了表征。 AlN晶体沉积在以下6H-SiC衬底上：具有和不具有初始SiC外延层的奇异晶体;以及具有和不具有初始SiC外延层的3.5度偏轴。 AlN晶体沉积在有和没有初始SiC外延层的8.0度偏轴4H-SiC上。原子力显微镜（AFM）显示，具有初始SiC外延层的AlN在6H-SlC和4H-SiC上的沉积显示出高质量的准二维生长，为原子平坦或阶梯流外延。

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