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Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

机译：GaN的无损伤光辅助低温蚀刻，可通过减少黄色发光来证明

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Damage-free etching of GaN by Cl sub 2, assisted by an ArF (193 nm) excimer laser, is emonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

机译：在ArF（193 nm）准分子激光的辅助下，Cl sub 2对GaN的无损伤刻蚀得到了证明。在低温下，光辅助蚀刻可以提供更好的蚀刻速率，并在很大程度上改善表面形态和质量。 AFM结果表明，获得的GaN蚀刻表面的均方根粗糙度为1.7 nm。与光电化学湿法刻蚀的GaN的光致发光光谱相比，光辅助低温刻蚀被证明是一种无损伤的干法刻蚀技术。

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《Symposium on GaN and related alloys》|1999年|p.G10.6.1-6|共1页
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Y.T.Hsieh; J.M.Hwang; H.L.Hwang; W.H.Hung;
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中图分类金属学与金属工艺;
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Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

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