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首页> 外文会议>Symposium on GaN and related alloys >Defect states in SiC/GaN-and SiC/AlGaN/GaN-heterostructures characterized by admittance and photocurrent spectroscopy
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Defect states in SiC/GaN-and SiC/AlGaN/GaN-heterostructures characterized by admittance and photocurrent spectroscopy

机译：以导纳和光电流谱为特征的SiC / GaN和SiC / AlGaN / GaN异质结构中的缺陷态

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摘要

Deep defect levels in n-type GaN/AlN/6H-SiC- and GaN/AlGaN/6H-SiC-heterostructures grown by Metallorganic Vapor Phase Epitaxy were analyzed by Thermal and Optical Admittance and Photocurrent Spectroscopy. The various thermal and optical transitions in the spectra originating from both the Schottky contact as well as the GaN/SiC- and AlGaN/GaN-heterojunctions were separated. This was achieved by variation of the modulation frequency, the use of different contact arrangements and by comparison with reference spectra from GaN/Sapphir samples and SiC substrates. In the GaN/AlGaN/SiC structures a bias voltage dependent peak shift was found which is correlated to an interface related defect distribution. In additionally to , SiC related defects, defect-band-transitions involving defects with transition energies at 2.2eV, 1.85eV, E sup G-(470+40) meV and E sub G(65-95) meV were found for the GaN layer.
机译：通过热和光导纳和光电流谱分析了通过金属有机气相外延生长的n型GaN / AlN / 6H-SiC-和GaN / AlGaN / 6H-SiC-异质结构中的深缺陷水平。分离了源自肖特基接触以及GaN / SiC-和AlGaN / GaN-异质结的光谱中的各种热跃迁和光学跃迁。这是通过改变调制频率，使用不同的接触布置以及与GaN / Sapphir样品和SiC衬底的参考光谱进行比较来实现的。在GaN / AlGaN / SiC结构中，发现了与偏置电压有关的峰移，该峰移与界面相关的缺陷分布有关。除SiC相关的缺陷外，还发现了GaN的缺陷带跃迁，其中缺陷能的跃迁能量为2.2eV，1.85eV，E sup G-（470 + 40）meV和E sub G（65-95）meV。层。

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