• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on GaN and related alloys >Defects in GaN pyramids grown on Si(111) substrates by selective lateral overgrowth
【24h】

Defects in GaN pyramids grown on Si(111) substrates by selective lateral overgrowth

机译：通过选择性横向过度生长在Si（111）衬底上生长的GaN金字塔中的缺陷

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Selective lateral trowth of GaN is a promising technique for producing high quality material for microelectronic and optoelectronic devices. Single-crystal GaN/AlN layers have been grown on Si (111) substrates and subsequently used as the seeding layer for selective lateral overgrowth. GaN pyramids are formed above holes patterned in a Si(sub)3N(sub)4 mask. Transmission electron microscopy (TEM, which also denotes the microscope) of these structures shows that the GaN pyramid, GaN seed layer, and AlN buffer layer in the samples have the follwing epitactic relationship with respect to the Si substrate: [1120] sub GaN [1120] sub AlN [110] sub Si and (0001) sub GaN (0001) sub AlN (0001) AlN (111) sub Si. In the core of the pyramid (at or above the seed windown), dislocations thread through the pyramid perpendicular to the interface plane with very high density. Some of these threading dislocations, which originate from the GaN/AlN seed layer, form 90 degree bends and half loops at the edge of the pyramid core. In the lateral growth part of the GaN pyramid, the dislocation density is relatively low. The majority of dislocations thread through the pyramid parallel to the interface plane. Planar defects, usually parallel to the interface plane, were observed near the interface. The defect density decreases with the distance away from the interface, so that the top several microns of material maybe completely defect free. The mechanism of the growth of GaN pyramids is discussed and related to this defect structure.
机译：GaN的选择性横向生长是一种用于生产用于微电子和光电器件的高质量材料的有前途的技术。单晶GaN / AlN层已在Si（111）衬底上生长，随后用作选择性横向过度生长的籽晶层。 GaN金字塔形成在Si（sub）3N（sub）4掩模中构图的孔上方。这些结构的透射电子显微镜（TEM，也表示显微镜）表明，样品中的GaN金字塔，GaN籽晶层和AlN缓冲层相对于Si基板具有以下流行的关系：[1120]副GaN [ 1120]子AlN [110]子Si和（0001）子GaN（0001）子AlN（0001）AlN（111）子Si。在金字塔的中心（在种子窗口或上方），位错以非常高的密度穿过金字塔，垂直于界面平面。其中一些源自GaN / AlN种子层的位错在金字塔芯的边缘形成90度弯曲和半环。在GaN金字塔的横向生长部分中，位错密度相对较低。大多数位错平行于界面平面穿过金字塔。在界面附近观察到通常平行于界面平面的平面缺陷。缺陷密度随远离界面的距离而减小，因此顶部几微米的材料可能完全没有缺陷。讨论了GaN金字塔生长的机理，并与该缺陷结构有关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号