Single-crystal GaN pyramids grown on (1 1 1)Si substrates by selective lateral overgrowth

Wei Yang; Scott A. McPherson; Zhigang Mao

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Single-crystal GaN pyramids grown on (1 1 1)Si substrates by selective lateral overgrowth

机译：通过选择性横向过度生长在（1 1 1）Si衬底上生长的单晶GaN金字塔

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Single-crystalline GaN/AIN layers have been grown on (1 1 1)Si substrates and subsequently used as seeding layer for selective lateral overgrowth on a patterned Si_3N_4 mask. GaN pyramids are formed during the lateral overgrowth. They are epitactically oriented with respect to the Si substrate wtih theorientation relationships [1 1 2 0]_(GsN)‖[1 1 0]_(si) and (0 0 1)_(GaN)‖(1 1 1)_(si). The pyramids were characterized by transmission electron microscopy and were found to have a reduced defect density compred with continuous layers of GaN on Si and very few defects in the upper portion.

机译：单晶GaN / AIN层已在（1 1 1）Si衬底上生长，随后用作籽晶层，用于在图案化的Si_3N_4掩模上进行选择性的横向过度生长。 GaN锥体在横向过长期间形成。它们通过取向关系[1 1 2 0] _（GsN）” [1 1 0] _（si）和（0 0 1）_（GaN）”（1 1 1）_相对于硅衬底在取向上取向（si）。通过透射电子显微镜对金字塔进行了表征，发现金字塔具有连续的Si上的GaN层，上部的缺陷极少，因此缺陷密度降低。

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来源
《Journal of Crystal Growth》 |1999年第3期|p.270-274|共5页
作者
Wei Yang; Scott A. McPherson; Zhigang Mao;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
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3. Improved a-plane GaN quality grown with flow modulation epitaxy and epitaxial lateral overgrowth on r-plane sapphire substrate [J] . Jeng-Jie Huang, Kun-Ching Shen, Wen-Yu Shiao, Applied Physicsletters . 2008,第23期

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4. Defects in GaN pyramids grown on Si(111) substrates by selective lateral overgrowth [C] . Z.Mao, X.McKernan, C.B.Carter, Symposium on GaN and related alloys . 1999

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Single-crystal GaN pyramids grown on (1 1 1)Si substrates by selective lateral overgrowth

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